SI4840B Search Results

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

si4840

Abstract: SI4840BDY-T1-E3 si4840bdy
Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

AN609

Abstract: Si4840BDY
Contextual Info: Si4840BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4840BDY

Abstract: Si4840BDY-T1-E3 A3350
Contextual Info: New Product Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 15 nC

SI4840BDYT1GE3

Abstract: SI4840B
Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si4840BDY vs. Si4840DY Description: N-Channel, 40 V D-S MOSFET Package: SO-8 Pin Out: Identical  Part Number Replacements: Si4840BDY-T1-GE3 replaces Si4840DY-T1-GE3 Si4840BDY-T1-E3 replaces Si4840DY-T1-E3

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

si4840

Abstract: Si4840BDY S-80740
Contextual Info: SPICE Device Model Si4840BDY Vishay Siliconix Dual N-Channel 40V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4840BDY

Abstract: Si4840BDY-T1-E3
Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

si4840bdy

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 15 nC

si4840bdy

Abstract: SI4840BDY-T1-E3 si4840 Si4840DY si4840dyt1e3 "Package SO-8" Si4840DY-T1 Si4840DY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4840BDY vs. Si4840DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4840BDY-T1-E3 replaces Si4840DY-T1-E3 Si4840BDY-T1-E3 replaces Si4840DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: SPICE Device Model Si4840BDY www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: LT3795 110V LED Controller with Spread Spectrum Frequency Modulation Features n n n n n n n n n n n n n n n n Description 3000:1 True Color PWM Dimming Wide Input Voltage Range: 4.5V to 110V Input and Output Current Reporting PMOS Switch Driver for PWM and Output Disconnect

LT3757AHMSE

Abstract: pic optocoupler driver mosfet LT3757 LT3799-1 D0712 Voltage to Current Converter circuit 4-20mA 50SQ04FN lggr LTDYX
Contextual Info: LT3757/LT3757A Boost, Flyback, SEPIC and Inverting Controller Features Description Wide Input Voltage Range: 2.9V to 40V n Positive or Negative Output Voltage Programming with a Single Feedback Pin n Current Mode Control Provides Excellent Transient Response

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: LT3795 110V LED Controller with Spread Spectrum Frequency Modulation Features n n n n n n n n n n n n n n n n Description 3000:1 True Color PWM Dimming Wide Input Voltage Range: 4.5V to 110V Input and Output Current Reporting PMOS Switch Driver for PWM and Output Disconnect

LTC3789

Abstract: LTC3789EGN CKT DIAGRAM OF TRIM POT SiR484OY LTC3780 Si4840BDY dimension LTC3789EUFD LTC3789GN BG1 LED LTC3789E
Contextual Info: LTC3789 High Efficiency, Synchronous, 4-Switch Buck-Boost Controller FEATURES DESCRIPTION Single Inductor Architecture Allows VIN Above, Below or Equal to Regulated VOUT n Programmable Input or Output Current Feedback Loop n Wide V Range: 4V to 38V IN n 1% Output Voltage Accuracy: 0.8V < V

Si4840BDP

Abstract: Transformer sepic LT3757IMSE VP1-0076 ERIE 75-25 sepic converter 550khz A9 SOT-23 dc dc sepic 24V converter A2 SOT-23 mosfet LTC1871-1
Contextual Info: LT3757 Boost, Flyback, SEPIC and Inverting Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 2.9V to 40V Positive or Negative Output Voltage Programming with a Single Feedback Pin Current Mode Control Provides Excellent Transient

beyond Be not charger

Abstract: LTC3789 c3789
Contextual Info: LTC3789 High Efficiency, Synchronous, 4-Switch Buck-Boost Controller Features Description Single Inductor Architecture Allows VIN Above, Below or Equal to the Regulated VOUT n Programmable Input or Output Current n Wide V Range: 4V to 38V IN n 1% Output Voltage Accuracy: 0.8V < V

LTC3789

Contextual Info: LTC3789 High Efficiency, Synchronous, 4-Switch Buck-Boost Controller FEATURES n n n n n n n n n n n n n n DESCRIPTION The LTC 3789 is a high performance buck-boost switching regulator controller that operates from input voltages above, below or equal to the output voltage. The

Si4840BDP

Abstract: LTDYX toroid transformer LT3757 12v 6A variable convertor diagram flyback converter 2A 15V MBRS340T3G snubber capacitor 68NF LT3757EDD LT3757IMSE
Contextual Info: LT3757 Boost, Flyback, SEPIC and Inverting Controller Features Description Wide Input Voltage Range: 2.9V to 40V n Positive or Negative Output Voltage Programming with a Single Feedback Pin n Current Mode Control Provides Excellent Transient Response n Programmable Operating Frequency 100kHz to

3 watt 70v zener diode

Abstract: inkjet print head interface K784P
Contextual Info: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP