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    SI4840BDYT1GE3 Search Results

    SI4840BDYT1GE3 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4840BDY-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 19A 8SOIC Original PDF 10
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    SI4840BDYT1GE3 Price and Stock

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    Vishay Intertechnologies SI4840BDY-T1-GE3

    MOSFET N-CH 40V 19A 8SO
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    DigiKey () SI4840BDY-T1-GE3 Cut Tape 4,235 1
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    Mouser Electronics SI4840BDY-T1-GE3 2,119
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    Bristol Electronics SI4840BDY-T1-GE3 1,820 3
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    Quest Components () SI4840BDY-T1-GE3 1,452
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    SI4840BDY-T1-GE3 1,452
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    Rutronik SI4840BDY-T1-GE3 Tape & Reel 5,000 2,500
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    Avnet Asia SI4840BDY-T1-GE3 17 Weeks 2,500
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    Vishay Siliconix SI4840BDY-T1-GE3

    MOSFET, POWER, N-CH, VDSS 40V, RDS(ON) 0.0075OHM, ID 10A, SO-8, PD 1.56W, VGS +/
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    RS SI4840BDY-T1-GE3 Bulk 35 3 Weeks 1
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    Vishay Huntington SI4840BDY-T1-GE3

    Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R / MOSFET N-CH 40V 19A 8SOIC
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    Win Source Electronics SI4840BDY-T1-GE3 20,000
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    SI4840BDYT1GE3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4840

    Abstract: SI4840BDY-T1-E3 si4840bdy
    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 18-Jul-08 si4840 PDF

    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 11-Mar-11 PDF

    SI4840BDYT1GE3

    Abstract: SI4840B
    Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si4840BDY vs. Si4840DY Description: N-Channel, 40 V D-S MOSFET Package: SO-8 Pin Out: Identical  Part Number Replacements: Si4840BDY-T1-GE3 replaces Si4840DY-T1-GE3 Si4840BDY-T1-E3 replaces Si4840DY-T1-E3


    Original     		Si4840BDY Si4840DY Si4840BDY-T1-GE3 Si4840DY-T1-GE3 Si4840BDY-T1-E3 Si4840DY-T1-E3 SI4840BDYT1GE3 SI4840B PDF

    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4840BDY

    Abstract: Si4840BDY-T1-E3
    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 11-Mar-11 PDF

    si4840bdy

    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY Si4840BDY-T1-E3 Si4840BDY-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF