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SI4774 Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4774DY-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 16A 8SO	Original	PDF	207.99KB

SI4774 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21	Original	si4774dy si4774dy-t1-ge3 2002/95/ec 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21	Original	si4774dy si4774dy-t1-ge3 2002/95/ec 11-mar-11	PDF
si47 Abstract: si4774 Contextual Info: SPICE Device Model Si4774DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4774dy 11-mar-11 si47 si4774	PDF
si4774 Abstract: Si4774DY Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21	Original	si4774dy si4774dy-t1-ge3 2002/95/ec 11-mar-11 +1si4774	PDF
Contextual Info: New Product Si4774DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.5 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Halogen-free According to IEC 61249-2-21	Original	si4774dy 2002/95/ec si4774dy-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
113397 Contextual Info: Si4774DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si4774dy an609 9456m 5253m +71482m 5834m 6909m 1839m 6640m 15-jun-11 113397	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes	Original	sis778dn sis782dn sis780dn siz914dt +1vmn-pt0104-1302	PDF
si4776 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications	Original	sir788dp si7774dp si7748dp si7772dp +7si4628dy si4752dy si4774dy si4712dy si4714dy si4776dy si4776	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF