SI4482DY Search Results
SI4482DY Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si4482DY | Unknown | Metal oxide N-channel FET, Enhancement Type | Original | 40.35KB | 4 | ||
| Si4482DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SI4482DY | Vishay | N-Channel 100-V (D-S) Rated MOSFET | Original | 64.6KB | 4 | ||
| Si4482DY | Vishay Intertechnology | N-Channel 100-V (D-S) MOSFET | Original | 61.26KB | 4 | ||
| SI4482DY | Vishay Siliconix | MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4.6A; Resistance, Rds on:0.06R; Voltage, Vgs Rds on measurement:6V; Case style:SO-8 (SOIC-8); Charge, gate n-channel:30nC; Current, Idm pulse:40A; Marking, SMD:SI4482DY; Pins, RoHS Compliant: Yes | Original | 72.86KB | 5 | ||
| Si4482DY SPICE Device Model | Vishay | N-Channel 100-V (D-S) MOSFET | Original | 202.25KB | 3 | ||
| SI4482DY-T1 | Vishay Intertechnology | N-Channel 100-V (D-S) MOSFET | Original | 61.26KB | 4 | ||
| SI4482DY-T1 | Vishay Telefunken | Original | 40.35KB | 4 |
SI4482DY Price and Stock
Vishay Siliconix SI4482DYTrans MOSFET N-CH 100V 4.6A 8-Pin SOIC N |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4482DY | 4,387 |
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SI4482DY | 191 |
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| SI4482DY | 112 |
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| SI4482DY | 52 |
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SI4482DY | 95 |
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Vishay Siliconix SI4482DY-T1Trans MOSFET N-CH 100V 4.6A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4482DY-T1 | 4,207 |
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SI4482DY-T1 | 739,373 |
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Vishay Semiconductors SI4482DYTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4.6A I(D),SO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4482DY | 19 |
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SI4482DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si4482DYContextual Info: Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si4482dys-54844--rev15-sep-97 | |
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Contextual Info: Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.6 0.080 @ VGS = 6 V 4.0 100 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4482DY Si4482DY-T1 (with Tape and Reel) |
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si4482dysi4482dy-t118-jul-08 | |
Si4482DY
Abstract: Si4482DY-T1
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si4482dysi4482dy-t1s-03951--rev26-may-03 | |
Si4482DYContextual Info: . SPICE Device Model Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4482dy0-to-10v19-jul-01 | |
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Contextual Info: Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.6 0.080 @ VGS = 6 V 4.0 100 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4482DY Si4482DY-T1 (with Tape and Reel) |
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si4482dysi4482dy-t108-apr-05 | |
Si4482DY
Abstract: Si4482DY-T1-E3 Si4482DY-T1-GE3
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si4482dy2002/95/ecsi4482dy-t1-e3si4482dy-t1-ge3+1 | |
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Contextual Info: Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 ID (A) 0.060 at VGS = 10 V 4.6 0.080 at VGS = 6 V 4.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC |
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si4482dy2002/95/ecsi4482dy-t1-e3si4482dy-t1-ge3+2 | |
Si4482DYContextual Info: Si4482DY N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4482dys-54844--rev15-sep-97 | |
Si4482DYContextual Info: Si4482DY Siliconix N-Channel 100-V D-S Rated MOSFET New Product Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4482dys-54844--rev15-sep-97 | |
Si4482DYContextual Info: SPICE Device Model Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4482dys-51095rev13-jun-05 | |
Si4482DYContextual Info: Si4482DY Single N-Channel, 100-V Rated MOSFET Product Summary VDS V 100 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.6 0.080 @ VGS = 6.0 V "4.0 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4482dys-54844--rev15-sep-97 | |
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Contextual Info: Si4482DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 ID (A) 0.060 at VGS = 10 V 4.6 0.080 at VGS = 6 V 4.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC |
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si4482dy2002/95/ecsi4482dy-t1-e3si4482dy-t1-ge3+1 | |
74678
Abstract: 4446 8809 an 7073 MOSFET 4446 AN609 Si4482DY
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si4482dyan60908-may-0774678+4 | |
Si4482DY
Abstract: Si4482DY SPICE Device Model
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si4482dy18-jul-08si4482dy spice device model | |
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transistor irf 649
Abstract: ADP1621 BH510-1006 50-ZL-220-M-10 FZ 89 1500 6.3V
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91709-amo-187-ba10-leadrm-10+8 | |
71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
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an607si9137ssop-28si9910+12 | |
5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
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si4418dy130mohmsi4420bdysi6928dq+12 | |
SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
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734tluweb-modem-34hcs412/wmtlv320aic10ipfb+15 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
MARKING LTG4
Abstract: ltg4 LTC1871EMS PBF CORES 58206-A2 LTC1871IMS rs-2b resistor 25 rs-2b resistor VP4-0047
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ltc1871-750khz550khz200khz+12 | |
LTG4Contextual Info: LTC1871-7 High Input Voltage, Current Mode Boost, Flyback and SEPIC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Optimized for High Input Voltage Applications Wide Chip Supply Voltage Range: 6V to 36V Internal 7V Low Dropout Voltage Regulator |
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ltc1871-7100mv50khzot-23+6 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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si4831dysi4833dysi4852dysi4816dy+14 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
LTC1871
Abstract: MAGNETICS 58206-A2 LTC1871EMS-7 VP1-0076 10BQ060 FDC2512 FMMT625 LTC1871-7 tdk capacitors flyback led driver with pwm dimming
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ltc1871-750khzot-23ltc3401/ltc3402+12 | |