SI43 Search Results

Si4368DY

Abstract: Si4368DY-T1-E3
Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Contextual Info: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1

Si4300DY

Contextual Info: Si4300DY New Product Vishay Siliconix N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky

Contextual Info: Si4388DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V ID (A)a Qg (Typ.) 10.7

Contextual Info: Si4310DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V

Si4308DY

Abstract: 71941
Contextual Info: Si4308DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.018 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0110 @ VGS = 4.5 V

Si4330DY

Abstract: Si4330DY-T1-E3
Contextual Info: Si4330DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 8.7 0.022 at VGS = 4.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg Tested Pb-free RoHS APPLICATIONS COMPLIANT

Si4360DY

Abstract: si4360
Contextual Info: SPICE Device Model Si4360DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

9435 mosfet

Abstract: 9435 mosfet 9435 mosfet 4501 AN609 Si4396DY
Contextual Info: Si4396DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74344

Abstract: SI4388DY
Contextual Info: Si4388DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 rDS(on) (Ω) 0.016 at VGS = 10 V 0.024 at VGS = 4.5 V 0.015 at VGS = 10 V 0.017 at VGS = 4.5 V 30 30 ID (A)a 10.7

AN467

Abstract: Application Note AN467 AN-467 IEC16 Si4330 CRC-16 AN46-7
Contextual Info: AN467 Si4330 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc Data D7 D6 D5 D4 D3 D2 D1 D0 POR Default 01 R Device Version vc[4] vc[3] vc[2] vc[1] vc[0] 06h 02 R Device Status ffovfl ffunfl rxffem headerr

si4220

Abstract: IA4320 Si4320 dqd 313 Si4320-IC 908-640 14 pin proportional rc toy receiver Remote Control Toy TRANSMITTER IC RF toy plane circuit diagram 433MH
Contextual Info: Si4320 Universal ISM Band FSK Receiver Si4320 PIN ASSIGNMENT DESCRIPTION Silicon Labs’ Si4320 is a single chip, low power, multi-channel FSK receiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 315, 433, 868, and 915 MHz

Si4330

Abstract: digital metal detector ezradiopro gfsk
Contextual Info: Si4330 ISM Receiver Description Features Silicon Laboratories’ Si4330 is a highly-integrated, single chip, wireless ISM receiver that is part of the EZRadioPRO family. The EZRadioPRO family includes a complete line of transmitters, receivers, and transceivers that allow RF system designers to

SI4310

Abstract: Si4310BDY
Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21

Si4346DY

Abstract: Si4346DY-T1-E3 Si4346DY-T1-GE3
Contextual Info: Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.023 at VGS = 10 V 8 0.025 at VGS = 4.5 V 7.5 0.030 at VGS = 3.0 V 6.8 0.036 at VGS = 2.5 V 6.0 Qg (Typ.) 6.5 • Halogen-free According to IEC 61249-2-21

74252

Abstract: S-61223-Rev si4396dyt1e3
Contextual Info: Si4396DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 30 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V 16 12.7

Contextual Info: Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses

Contextual Info: Si4320DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 25 0.004 at VGS = 4.5 V 22 • TrenchFET Gen II • Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET

Contextual Info: Si4378DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

Si4340DDY

Contextual Info: Si4340DDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8

Contextual Info: Si4348DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0125 at VGS = 10 V 11 0.014 at VGS = 4.5 V 10 • TrenchFET Gen II Power MOSFET Pb-free APPLICATIONS RoHS • High-Side DC/DC Conversion

Si4364DY

Abstract: Si4364DY-T1-E3
Contextual Info: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous

Si4336DY

Contextual Info: SPICE Device Model Si4336DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range