SI4378DY Search Results

Contextual Info: Si4378DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

Si4378DY

Contextual Info: SPICE Device Model Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4378DY

Abstract: Si4378DY-T1-E3 Si4378DY-T1-GE3
Contextual Info: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET

Si4378DY

Abstract: Si4378DY-T1-E3
Contextual Info: Si4378DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

Contextual Info: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET

Si4378DY

Abstract: Si4378DY-T1-E3 Si4378DY-T1-GE3
Contextual Info: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET

Si4378DY-T1-E3

Abstract: Si4378DY
Contextual Info: Si4378DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0027 @ VGS = 4.5 V 25 0.0042 @ VGS = 2.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology

Contextual Info: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET

Contextual Info: Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET

CT1-20

Abstract: AN609 Si4378DY 73820
Contextual Info: Si4378DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4378DY

Abstract: A146
Contextual Info: SPICE Device Model Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4378DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0027 @ VGS = 4.5 V 25 0.0042 @ VGS = 2.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology

Contextual Info: 19-3443; Rev 1; 6/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

Contextual Info: KIT ATION EVALU E L B A IL AVA 19-3443; Rev 3; 4/10 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

BC240A

Abstract: MAX5926 MAX5924 MAX5924AEUB MAX5924BEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB
Contextual Info: KIT ATION EVALU E L B AVAILA 19-3443; Rev 2; 10/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: 19-3443; Rev 2; 10/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

Contextual Info: KIT ATION EVALU E L B AVAILA 19-3443; Rev 2; 10/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

MAX5926

Contextual Info: 19-3443; Rev 0; 10/04 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 are available with open-drain PGOOD and/or PGOOD outputs. The devices also feature a circuit breaker with temperaturecompensated RDS ON sensing. The MAX5926 features

MAX5926

Abstract: MAX5924 MAX5924AEUB MAX5924BEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB
Contextual Info: KIT ATION EVALU E L B A IL AVA 19-3443; Rev 3; 4/10 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

Power MOSFET

Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
Contextual Info: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4