SI2309DST1E3 Search Results

Si2309DS

Abstract: Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

Si2309DS

Abstract: Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code

A9 SOT-23

Abstract: Si2309DS Si2309DS-T1
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

A8299

Contextual Info: A8299 Dual LNB Supply and Control Voltage Regulator Features and Benefits Description ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Stable with low-profile ceramic boost capacitors ▪ Adjustable LNB output current limit from 250 to 950 mA

diode MARKING CODE A9 sot23

Abstract: SOT-23 marking A9 marking code vishay SILICONIX sot-23 A9 marking diode sot23 A9 SOT-23
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Si2309DS

Abstract: Si2309DS-T1 7083
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code

SOT-23 marking A9

Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236

power amplifier 3000W with PCB

Contextual Info: A8295 Single LNB Supply and Control Voltage Regulator Features and Benefits Description ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Adjustable LNB output current limit from 250 to 950 mA ▫ Covers wide array of application requirements

Si2309CDS

Abstract: Si2309DS si2309cdst1e3 Si2309CDS-T1-GE3 si2309cds-t1-e3 T1 diode Si2309DS-T1 SI2309DST1E3
Contextual Info: Specification Comparison Vishay Siliconix Si2309CDS vs. Si2309DS Description: Package: Pin Out: P-Channel, 60-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2309CDS-T1-GE3 replaces Si2309DS-T1-GE3 Si2309CDS-T1-E3 or Si2309CDS-T1-GE3 replaces Si2309DS-T1

Si2309DS

Abstract: Si2309DS-T1 SI2309DS-T1-E3
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code

Contextual Info: A8297 Dual LNB Supply and Control Voltage Regulator Features and Benefits Description ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Adjustable LNB output current limit from 250 to 950 mA ▫ Covers wide array of application requirements

A8303

Abstract: A8303SESTR-T
Contextual Info: A8303 Single LNB Supply and Control Voltage Regulator Features and Benefits Description ▪ Integrated boost MOSFET, current sensing, and compensation ▪ Stable with low-profile ceramic boost capacitors ▪ New 15.67 V output setting to accommodate designs in the