SI2309CDS Search Results

Si2309CDS

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

Si2309CDS

Contextual Info: SPICE Device Model Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2309CDS

Abstract: Si2309DS si2309cdst1e3 Si2309CDS-T1-GE3 si2309cds-t1-e3 T1 diode Si2309DS-T1 SI2309DST1E3
Contextual Info: Specification Comparison Vishay Siliconix Si2309CDS vs. Si2309DS Description: Package: Pin Out: P-Channel, 60-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2309CDS-T1-GE3 replaces Si2309DS-T1-GE3 Si2309CDS-T1-E3 or Si2309CDS-T1-GE3 replaces Si2309DS-T1

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

SI2309cds-t1

Abstract: Si2309CDS tjm sot23
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

AN609

Abstract: Si2309CDS
Contextual Info: Si2309CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: SPICE Device Model Si2309CDS www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

mosfet marking code N9

Abstract: Si2309CDS Si2309CDS-T1-E3
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

thermistor type R53

Contextual Info: User's Guide SLVU912 – June 2013 TPS65310AEVM and TPS65311EVM Evaluation Module TI's TPS65310AEVM and TPS65311EVM evaluation modules EVM help engineers evaluate the operation and performance of the TPS65310A and TPS65311 power supply IC for safety applications. The

SiB431EDK

Contextual Info: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs