SI15 Search Results

N-Channel mosfet sot-363

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

Si1551DL

Abstract: Si1551DL-T1-E3
Contextual Info: Si1551DL Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) (Ω) ID (A) 1.9 at VGS = 4.5 V 0.30 20 3.7 at VGS = 2.7 V 0.22 - 20 4.2 at VGS = 2.5 V 0.21 0.995 at VGS = - 4.5 V - 0.44 1.600 at VGS = - 2.7 V

PBT-GF30-V0

Abstract: slot sensor inductive slot sensor Si15-K30-RZ3
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-RZ3 48 15 30 42

71079

Abstract: mosfet low vgs si1555dl-t1-e3 Si1555DL Si1555DL-T1 A.4 SOT363
Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY N-Channel P-Channel 20 −8 rDS on (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 0.600 @ VGS = −4.5 V −0.60 0.850 @ VGS = −2.5 V −0.50 1.200 @ VGS = −1.8 V

Si1553DL

Contextual Info: Si1553DL New Product Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = –4.5 V "0.44 1.800 @ VGS = –2.5 V "0.32 SOT-363

PBT-GF30

Abstract: SI15 slot sensor Si15-K30-AN6X transistor k30 PBT-GF30-V0
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-AN6X 48 15 30

Contextual Info: Inductive sensor slot-type SI15-K30-AN6X • Slot sensor, height 30 mm ■ Plastic, PBT-GF30-V0 ■ DC 3-wire, 10…30 VDC ■ NO contact, NPN output ■ Cable connection Wiring diagram Type code Ident no. SI15-K30-AN6X 1605003 Slot width Repeatability Temperaturdrift

mosfet low vgs

Abstract: diode marking CODE VN S2 Si1501DL marking code vishay SILICONIX
Contextual Info: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V

4584 equivalent

Abstract: AN609 Si1551DL
Contextual Info: Si1551DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

87784

Contextual Info: Si1539DDL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Si1557DH

Contextual Info: SPICE Device Model Si1557DH Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1563DH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 0.490 at VGS = - 4.5 V - 1.00

Si1553DL

Contextual Info: SPICE Device Model Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1501DL New Product Vishay Siliconix Dual N- and P-Channel "20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V

KEMA 02 ATEX

Abstract: SI15 PBT-GF30-V0 Si15-K30-Y1X inductive slot sensor
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-Y1X 48 15 30 42

PBT-GF30

Abstract: SI15-K30-AZ3 PBT-GF30-V0 inductive slot sensor slot sensor 55BU
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-AZ3 48 15 30 42

Si15-K30-Y1

Abstract: kema 02 ATEX 1090X PBT-GF30-V0
Contextual Info: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Inductive sensor slot-type Si15-K30-Y1 48 15 30 42

Si1553DL

Abstract: D234
Contextual Info: Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = -4.5 V "0.44 1.800 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS)

67645

Contextual Info: Si1539CDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si1563EDH

Abstract: diode 0750 SI1563EDH-T1
Contextual Info: New Product Si1563EDH Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V

MARKING CODE EA

Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1

Contextual Info: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V

Si1563EDH

Abstract: "MARKING CODE EA"
Contextual Info: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V

Si1539DL

Contextual Info: SPICE Device Model Si1539DL Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range