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    S12125 Search Results

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    Essentra Components ASPS-12-125

    BUMPER SQUARE 0.75"L X0.75"W BLK
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    DigiKey ASPS-12-125 Bulk 1,000 20
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    Mouser Electronics () ASPS-12-125 700
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    ASPS-12-125 700
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    Newark ASPS-12-125 Pack 1
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    Bisco Industries ASPS-12-125 116
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    DB Roberts ASPS-12-125
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    WEE 202S121-25C-0

    HEATSHRINK BOOT SZ21 BLACK
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    DigiKey 202S121-25C-0 Tray 775 2
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    JRH ELECTRONICS MTMS-121-25-S-S-100

    CONN HDR .050" 21POS
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    DigiKey MTMS-121-25-S-S-100 Tube 73 5
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    POWELL ELECTRONICS SS-12125

    PRESSURE SENSOR PART
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    DigiKey SS-12125 Bulk 50 50
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    POWELL ELECTRONICS 222S121-25C-0

    HEATSHRINK BOOT 90DEG SZ21 BLK
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    DigiKey 222S121-25C-0 Bulk 26 1
    • 1 $616.35
    • 10 $604.02
    • 100 $580.10
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    S12125 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiS892ADN

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MARKING CODE EA

    Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE EA "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125 PDF

    62625

    Abstract: Si4833BDY
    Contextual Info: SPICE Device Model Si4833BDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4833BDY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62625 PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF