S12125 Search Results
S12125 Price and Stock
TE Connectivity 202S121-25C-0Heat Shrink Boot With Rayaten Shielding - Straight - 0.41 to 0.2 (10.4 to 5 mm) - 1.77 (45 mm) Length - Black. |
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202S121-25C-0 | 147 |
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202S121-25C-0 | Box | 47 Weeks, 1 Days | 52 |
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202S121-25C-0 | Bulk | 1 |
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| 202S121-25C-0 | Bulk | 52 |
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| 202S121-25C-0 | Bulk | 1 |
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202S121-25C-0 | Each | 95 | 1 |
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202S121-25C-0 |
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202S121-25C-0 | 89 | 1 |
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202S121-25C-0 | 1 |
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TE Connectivity 222S121-25C-G28-0135DEG Boot Coated |
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222S121-25C-G28-0 | 18 |
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222S121-25C-G28-0 | Box | 47 Weeks, 5 Days | 58 |
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222S121-25C-G28-0 |
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222S121-25C-G28-0 | 12 | 58 |
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222S121-25C-G28-0 | 1 |
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Samtec Inc MTMS-121-25-G-D-001 |
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MTMS-121-25-G-D-001 |
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Samtec Inc MTMS-121-25-G-D-115.050 x .100 Variable Post Height Micro Terminal Strip |
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MTMS-121-25-G-D-115 |
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MTMS-121-25-G-D-115 | Tube | 2 Weeks, 1 Days | 1 |
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MTMS-121-25-G-D-115 | Bulk | 1 |
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MTMS-121-25-G-D-115 | 1 |
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Samtec Inc MTMS-121-25-G-D-040 |
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MTMS-121-25-G-D-040 |
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S12125 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
Original |
sis892adn2002/95/ec2011/65/eujs709a+1 | |
SiS892ADNContextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
Original |
sis892adnsis892adn-t1-ge32011/65/eu2002/95/ec+1 | |
MARKING CODE EA
Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
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si1563edhsc-70ot-3632011/65/eu+7 | |
62625
Abstract: Si4833BDY
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Original |
si4833bdy2011/65/eu2002/95/ec12-mar-12+1 | |
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Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1 |
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si1563edhsc-70ot-3632002/95/ec+3 | |
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Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
Original |
sis892adn2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1 |
Original |
si1563edhsc-702011/65/eu2002/95/ec+1 |