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    S12125 Search Results

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    S12125 Price and Stock

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    WEE 202S121-25C-0

    HEATSHRINK BOOT SZ21 BLACK
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    DigiKey 202S121-25C-0 Tray 1,157 2
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    • 100 $76.31
    • 1000 $60.82
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    Essentra Components ASPS-12-125

    BUMPER SQUARE 0.75"L X0.75"W BLK
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    DigiKey ASPS-12-125 Bulk 100 20
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    Mouser Electronics ASPS-12-125 760
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    Newark ASPS-12-125 Pack 1
    • 1 $10.21
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    RS ASPS-12-125 Bulk 8 Weeks 20
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    Bisco Industries ASPS-12-125 116
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    DB Roberts ASPS-12-125
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    TE Connectivity 202S121-25C-0

    202S121-25C-0
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    DigiKey 202S121-25C-0 Box 50 1
    • 1 $129.81
    • 10 $110.35
    • 100 $96.84
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    Avnet Americas 202S121-25C-0 Box 16 Weeks 52
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    Mouser Electronics 202S121-25C-0 4
    • 1 $117.03
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    Newark 202S121-25C-0 Bulk 174 1
    • 1 $112.76
    • 10 $108.54
    • 100 $105.73
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    TTI 202S121-25C-0 Each 376 1
    • 1 $99.16
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    • 100 $81.21
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    Chip 1 Exchange 202S121-25C-0 1,749
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    Master Electronics 202S121-25C-0 230
    • 1 $99.16
    • 10 $93.46
    • 100 $78.03
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    TE Connectivity 222S121-25C-0

    HEATSHRINK BOOT 90DEG SZ21 BLK
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    DigiKey 222S121-25C-0 Box 8 1
    • 1 $145.43
    • 10 $123.63
    • 100 $110.37
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    Avnet Americas 222S121-25C-0 Box 16 Weeks 25
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    Mouser Electronics 222S121-25C-0 1
    • 1 $125.32
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    Newark 222S121-25C-0 Bulk 25 1
    • 1 $151.97
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    Bristol Electronics 222S121-25C-0 17 1
    • 1 $96.00
    • 10 $88.61
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    TTI 222S121-25C-0 Each 22 1
    • 1 $110.32
    • 10 $110.32
    • 100 $106.81
    • 1000 $104.68
    • 10000 $103.64
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    Honeywell Sensing and Control SS-12125

    PRESSURE SENSOR PART
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    DigiKey SS-12125 Bulk 216
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    Mouser Electronics SS-12125
    • 1 $6.37
    • 10 $4.64
    • 100 $2.95
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    Master Electronics SS-12125
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    • 100 $3.37
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    • 10000 $2.80
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    S12125 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiS892ADN

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MARKING CODE EA

    Abstract: "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125
    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE EA "leadframe material" DIP marking EA sot-363 dual mosfet si1563EDH-T1-E3 S12125 PDF

    62625

    Abstract: Si4833BDY
    Contextual Info: SPICE Device Model Si4833BDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4833BDY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62625 PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si1563EDH Vishay Siliconix Complementary 20 V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1 0.490 at VGS = - 4.5 V -1


    Original     		Si1563EDH SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF