SI 3105 A Search Results

MN3105

Abstract: 22PF MN3300 MN3304 bbd ic bbd -MN3
Contextual Info: PANASONIC I N D L / E L E K 6932852 B B M -CIO m N â n 3 1 ^ d De J L A S A S E □ DDL. 513 7 , , , . , . I NOL« E l E C T R O N I C.72C 065,13 ,. PANASONIC D 75 ^ ù - ^ V ^ ' T r x ^ . • M N 3 1 0 5 “ ’' “ ’ 0 5 W Æ

LT 862

Abstract: LT-803 LT-863 lt 860 lt 864 LT 803 r 3589 LT 802 A ZA 1411 LT 01
Contextual Info: PART III—TEST, SYSTEMS AND LABORATORY POWER SUPPLIES HI Now including the LT-860-GPJB, LT-880-GPIB, and ' LT-890-GPIB Series stand-alone ÎEEE-488 Power Supplies. D 80% less weight, 35% less volume than equivalent models. HI Constant voltage/constant current operation.

photon coupled interrupter 3101

Abstract: photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046
Contextual Info: INFRARED EMITTING DIODES NTE type Number 3017 3027 3028 3029A 3099 30001 Typical Total External Radiated Power mW Diagram Number Description PN Gallium Arsenide Bi-Directional Bi-Directional Maximum Forward Voltage (Volts) Reverse Voltage (Volts) DC Forward

Contextual Info: 7.1 5.08 09.5 S f- r S t e c k b e r e i c h n a c h IEC 1 6 9 = 1 5 G r ad e i M a t i n g a r e a o c c . t o IEC 1 6 9 - 1 5 G r o d e 1 15.18 11.62 lO to CTJ co £30 CM V e r p a c k u n g / packaging: StückzahI / quantity: 1010160 80 5.08 pcb-Ioyout

Contextual Info: H e w l e t t -Pa c k a r d / c m p n t s biE » 4 4 4 7 5 Û 1» 0 D 0 ß 4 1 3 3flS • H P A B S 1 PACKARD HEWLETT XL'EM Integrated R esistor Lamps 5 Volt and 12 Volt in T-l and T-l3/4 P ackages HLMP HLMP HLMP HLMP HLMP HLMP HLMP HLMP Technical Data Features

MSM27C802ZB

Contextual Info: O K I Semiconductor MSM27C802ZB 524,288-W ord x 16-Bit o r 1,048,576-W ord x 8-Bit O ne T im e PRO M D ESCR IPTIO N The M SM 27C802ZB is an 8 Mb electrically Program mable Read-Only M em ory whose configuration can be electrically switched betw een 524,288 words x 16 bits and 1,048,576 words x 8 bits. The M SM 27C802ZB

Contextual Info: Whpt mL'Km T-18/4 5 mm Diffused Solid State Lamps Technical Data • High Intensity • Choice of 4 B right Colors High Efficiency Red Orange Yellow High Performance Green • Popular T-l3/4 D iam eter Package • Selected M inimum Intensities • Wide Viewing Angle

Contextual Info: L29C524/525 Dual Pipeline Register Features Description □ Pipeline Registers — dual 7-deep L29C524 or dual 8-deep (L29C525) The Logic Devices L29C524 and L29C525 are high performance, low power CMOS pipeline registers. They are pin-for-pin compatible with the

F100250

Abstract: lso5
Contextual Info: 100250 NATIONAL SEMICON3 LOGIC) b lE LSG112E D DG7b017 b27 * N S C 1 Not Intended For New Designs National Semiconductor ~ T - 5 '2 - 3 0 - 0 7 100250 Quint Full Duplex Line Transceiver Features General Description The 100250 is a quint line transceiver capable of simulta­

SI 3105 A

Abstract: TB 1275 N DATA SHEET t2d7 diode 2n 1305 6N6 datasheet E10HZ m184a MSM63180 t3d7 diode LCD 1632 USER MANUAL
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

NJL5194K

Abstract: NJL5194K-F10 NJL5194K-F20
Contextual Info: NJL5194K m IW m R N J L 5 1 9 4 K \t' 7 n - ) p \Z £ % \tA ,1 Z tittW 5 Ifâ tL * m 4 n & M « * S Ï T & t i* y m > m •m m m .7 * N JL51 81K /83K 0 7 >mtl$ Ä 7 IIL , U fe -i y 11£ o T f e >9 £ - f o ffl ^ « t« « ) # t e : mm b 'J 7 □ - H S f ë r o H Â t t t f ë î f c i ^ h H ^ r o î a f t Î I

NE70083

Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
Contextual Info: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.

Contextual Info: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

BFQ42

Abstract: SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke
Contextual Info: 711002t. Q0b31ôl G7Q BIPHIN bSE D BLW29 J PHILIPS V. INTERNATIONAL V.H.F. POW ER TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power

Contextual Info: CD74LPT543 Semiconductor Fast CMOS 3.3V 8-Bit Latched Transceiver December 1996 Features Description • Advanced 0.6 micron CMOS Technology The CD74LPT543 is an 8-bit wide non-inverting transceiver designed with two sets of eight D-type latches with separate

SW2601

Abstract: ET1500 scans-048 ep2500 DSAGER00040 ep48 6 A C 7
Contextual Info: O P 38/600 OS12/500 Type 10 7,5 12,6 3 1,25 0,7 Uf if ~ ~ ~ ~ ET ET ET G 2xEPJ8 1000 1200 600 500 0 75/1000 10 1.1 300 80 30 55 - — 2x10 5 3,8 2 x 4 ,5 10 - s D 2 x44 ,5 Ri - Rk ' 3 3 2,6 2 1.3 1.8 7 9 - 14^1) - R i, u g ï~ - - - - - 9 20 20 25,5 2°)

sanyo marking JE

Abstract: SIP16 SIP14H sanyo 3051 3042B
Contextual Info: 1C CASE OUTLINES 1C CASE OUTLINES FOR TV/VTR • Sanyo semiconductor product case outlines are illustrated below. • A ll dimensions are in mm. Dimensions which are not followed by min. or max. are represented by typical values. • No marking is indicated.

Contextual Info: Product Specifications PART NO: REV: VL381L6523E-CCM 1.1 General Information 512MB 64Mx72 DDR SDRAM ECC UNBUFFERED DIMM 184-PIN Description: The VL381L6523E is a 64M X 72 Double Data Rate SDRAM high density unbuffered DIMM. This memory module consists of 9 CMOS 64Mx8 bit with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K EEPROM in 8-pin TSSOP package. This module is a 184-pin Dual In-line Memory Module and

MP7682

Abstract: MP7682SD
Contextual Info: niCRO POWER SYSTEMS INC blE » □ □ T VMMM □ÜDMSÔ4 QhH nps -SI I ®7 MP7682 CMOS 6-Bit High Speed Analog-to-Digital Converter M Micro Power Systems FEATURES BENEFITS • Sampling Rates from 0.001 to 15 MHz (MSPS • Interface to any Analog Input Range between

ZENAMIC

Abstract: ZENAMIC VARISTOR zenamic z15l Z21L431 ZI5L391 Z2IL221 s60 varistor ZENAMIC 331 varistor z21l 471 Z21L102
Contextual Info: T 7f i ~ -? 3 PO lilER P ROD UC TS 45E D m 72=11121 □□□□001 2 «POUR B u lle tin E 2 3 0 3 D P O W E R P R O D U C T S IN T E R N A T IO N A L LTD M ETAL OXIDE VARISTOR ZENAMIC Z E N A M I C is the produ ct nam e of a metal o x id e v aristo r Features

CD40358

Abstract: M 1958 M
Contextual Info: HARRIS SEMICOND SECTOR M ME D • 4305271 0037453 T HARRIS CMOS 4-Stage Parallel In/Parallel Out Shift Register with J-K Serial Inputs and True/ Complément Outputs High-Voltage Types 2 0-V o lt Rating ■ CD40358 is a four-stage clocked signal serial register w ith provision for syn­

socket g34 pinout

Abstract: smd marking WMM
Contextual Info: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02

E83F

Abstract: SI 3105 A tube cathodique philips tube cathodique culot 19E20
Contextual Info: PH ILIPS SQ [Ë83F SPECIAL QUALITY PENTODE for use in telephone equipment life longer than 10 000 hours PENTHODE A HAUTE SÉCURITÉ pour utilisation dans l'equipment téléphonique (durée plus longue que 10 000 heures) ZUVERLÄSSIGE PENTODE zur Verwendung in Telephonanlagen

Contextual Info: CY7C271 CY7C274 CYPRESS SEMICONDUCTOR 32,768 x 8 PROM Power Switched and Reprogrammable Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns commercial — 55 ns (military) • Low power — 660 mW (commercial)