SHINDENGEN MC Search Results

10-80 v input step down with mosfet

Abstract: MD1421N
Contextual Info: Shindengen @ America, Ine 3.3V/5V Output MD1421N 14.1 MAX DESCRIPTION Dimensions = mm The MD1421N is a high-efficiency step down DC-DC converter Company Name Type No. power integrated circuit with main MOSFET switch and synchronous _ rectification MOSFET. The MD1421N can deliver 15 watts maximum

MD1222N

Abstract: shindengen m mos 245
Contextual Info: 2.5V-12V Output MD1222N 13.6 DESCRIPTION Dimensions = mm 14.1MAX + – 0.1 32 The MD1222N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and synchronous + 7.5 – SHINDENGEN M D1 2 2 2 N 5038N

MD1422N

Abstract: 25V12V LS12A
Contextual Info: 2.5V-12V Output MD1422N Shindengen @ America.Inc. DESCRIPTION The MD1422N is a high-efficiency step down DC-DC converter power integrated circuit with main MOSFET switch and synchronous rectification MOSFET. The MD1422N can deliver high efficiency over a wide input voltage range. This device has output voltage digitally

MD1320N

Contextual Info: 3.3V/5V Output MD1320N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1320N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and Schottky + 7.5 – SHINDENGEN MD1320N 5038N Barrier Diode. The MD1320N can deliver 7.5 watts maximum

SHINDENGEN TR 222

Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
Contextual Info: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5

MD1422N

Abstract: 25V12V SHINDENGEN MD1422N
Contextual Info: 2.5V-12V Output MD1422N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1422N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and synchronous + 7.5 – SHINDENGEN MD1422N 5038N rectification MOSFET. The MD1422N can deliver high efficiency over

low voltage mosfet switch 3 amp

Abstract: MD1421N 5038N
Contextual Info: 3.3V/5V Output MD1421N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1421N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and synchronous + 7.5 – SHINDENGEN MD1421N 5038N rectification MOSFET. The MD1421N can deliver 15 watts maximum

shindengen m

Contextual Info: Shindengen 3.3V /5V Output MD1320N 14.1 M AX Dimensions = mm Americajnc. DESCRIPTION 13.6 : The M D1320N is a high-efficiency step down DC-DC converter 17 32 Company Name power integrated circuit with main M O SFET switch and Schottky Type No. Barrier Diode. The M D1320N can deliver 7.5 watts maximum

Shindengen catalog

Abstract: shindengen zener
Contextual Info: 大容量面実装デバイス 単体 Power zener Diode •外形図 OUTLINE ST60-48MF ST60-48MF MCP Package Power Surface Mount Device Single Zener Diode ■特性図 CHARACTERISTIC DIAGRAMS Package : MCP Unit:mm Weight 1.5g 40V 6000W TI=25℃ 10/1000 s

2N60738

Abstract: 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062

Contextual Info: L V X v U -X y\°7 - M 0 S F E T iS S S ^ - T LVX S e rie s P ow er MOSFET OUTLINE DIMENSIONS S 2 K 1 8 1 1 Case •MTO-3P F20W30 300V 20A [ U n it ! m m ] 5.Q ±0-3 2.2 1 i 3.3 Q 'ï n a # ( » j ) D a te c o d e • A * S * (C iss) ¡eic-tf□ ; u 77,mcoAtismm^i v

MR2920

Abstract: MR2940 SHINDENGEN MR2520 MR2520 AC180276V kick circuit drain MR2000 MR2540 mr2520 equivalent AC180
Contextual Info: Vol.02-06-e / June2002 MR2000 Series Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT Shigeru Hisada - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Joined the company in 1991 1 Introduction

MR1721

Abstract: MR1520 MR1000 TH101 TR201 AC180276V mr1520 equivalent AC180 mr15 c103 shindengen
Contextual Info: Vol.02-05-e / June2002 MR1000 Series Standby-compatible Partial Resonance Power Supply IC Modules Masaaki Hayashi - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. Assistant Manager Joined the company in 1989 1 Introduction Energy conservation guidelines from the Ministry of Economy,

Shindengen sh

Abstract: marking code PHII D1FJ10 BS 531 shindengen m Schottky Diode Marking UX Shindengen sh 579 Shindengen sh 579 ja
Contextual Info: SCHOTTKY 1. Absolute Maximum Ratings Item T l= BARRIER DIODE SPECIFICATION 2 5°C unless otherwise sp ecifie d Conditions Symbol Operating junction Temperature Max reverse voltage V Average r e c tifie d Forward current I 0 5 OHz Sine wave, Resistance load

HBET3R3300N

Abstract: 251f CF43X7R223K1000AT CISPR class B CM21W5R tokin 6.3a DC48V 1SS400TE61 w584 HBET2R5350
Contextual Info: Updated : 2008.7.30 5RE-080159-4 新電元工業株式会社 絶縁型小型大容量 DC/DC コンバータ HBET シリーズ電源モジュール 取扱説明書 入力電圧 36～75Vdc出力電圧 1.2～12.0V 48W～108W までをシリーズ化 概要

S4UG

Abstract: DF25SC6M SHINDENGEN 33 s60sc4m
Contextual Info: •S •Bl » K; m -i. •4 M I at » na* m ff! 3} 9t äS äs 3t 3t 2 lat ? ’S . % 2 9t -o æ 2 -X -X H H m vi pW- i ridi m m. >ii wt N> I a rS IH 3? W > 9tt >4 ° c m m ga (£ — < V fH] $ 38 fit h£ 35 ^ d a vt A ^ I S EG -/I 9' Si Vt A m m ■H a I V*

1SS400TE61

Abstract: CF43X7R223K1000AT C3225X7R2A105Mt cm21w5r DC48V UPS2A330MPD1TD 9A13 w584 HBQ12R CM21W5R683K50AT
Contextual Info: 5RE-080143-2 Updated : 2008/08/06 新電元工業株式会社 絶縁型小型大容量 DC/DC コンバータ HBQ12R180 電源モジュール 取扱説明書 入力電圧 36～75Vdc出力電圧 12V 概要 HBQ12R180 電源モジュールは、業界標準サイズの Quarter Brick サイズの DC/DC コンバータです。

ISS106

Abstract: SK3002 ERE81B004 BYV21-30 BYV21-40 BYV21-45 MBR5831H1 BYV21-35 nihon inter SK3004
Contextual Info: SCHOTTKY RECTIFIERS Item Number Part Number Manufacturer lo Max VRRM •FSM Max A (V) (A) (V) VF IF @ IR Test (A) (A) IR VR 25 °C @ Test 00 @ T2 Test 'Oper Package Style Max c CC) 10m 10m 10m 150m 150m 150m 150m 250m 150m 150m 150m 150 150 150 125 100 100

IN5363B

Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Contextual Info: Cross Reference Every care has b een taken in compiling this cross referen­ ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

Contextual Info: v a 7 h y Schottky Barrier Diode O S Twin Diode o u t l in e d i m e n s io n s D10SC6M 60 V Case : ITO-220 10 A « s •Tjl5C TC • P • I r r s m Z ^ IÆ -J U K ffl % •S R S 3 S • * « . y -A . • a « . J K - S 'y im s s rn OAfSâË Absolute Maximum Ratings

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Contextual Info: y a v h 7 Schottky Barrier Diode S Twin Diode MMrtfèm D10SC4M OUTLINE DIMENSIONS C a se : ITO-220 40V 10A • T j 15013 • P rr sm ffl & •S R g • D C / D C H V A '- ^ 0 A * ü •m m . > f - h . • a s , x — s > 7 u m s i •i&Ë&JS^AElfë Absolute Maximum Ratings