SHF0289 Search Results

SHF-0289Z

Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
Contextual Info: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves

FR4 dielectric constant 4.6

Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SHF-0289

Abstract: SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89
Contextual Info: SHF-0289 Z SHF-0289(Z) 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)

Contextual Info: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Contextual Info: 1Stanford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ mance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while m inim izing Schottky

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

Stanford SHF-0289

Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
Contextual Info: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

SHF-0289 App Note AN-032

Abstract: SHF-0289 an032 HFET
Contextual Info: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

SHF-0289Z

Abstract: SHF-0289 SHF0289Z SHF-0289 App Note AN-032 s-parameter file of SHF-0289 by Sirenza 140C AN032
Contextual Info: Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

lm 293 iz 5

Abstract: T-522A shf0289 t 522
Contextual Info: H Siali ford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ m ance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology im proves breakdown voltage while minimizing Schottky

SHF-0289

Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
Contextual Info: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

SHF-0289

Abstract: SHF-0289Z amplifier shf jesd22-a104b SHF-0189 SHF-0189Z JESD22-A113C GaAS fet sot89 JESD22-A114 reliability testing report
Contextual Info: Reliability Qualification Report SHF-xx89 - SnPb Plated SHF-xx89Z - Matte Sn, RoHS Compliant Products Qualified SHF-0189 SHF-0289 SHF-0189Z SHF-0289Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

SHF-0289

Abstract: SHF 189 FR4 dielectric constant vs temperature
Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

0289

Abstract: Stanford SHF-0289
Contextual Info: 1Stanford Microdevices Product Description SHF-0289 Stanford M icrodevices’ SHF-0289 series is a high perfor­ mance AIGaAs/G aAs Heterostructure FET housed in a low-cost surface-m ount plastic package. HFET technology j im proves breakdown voltage while minimizing Schottky

SHF-0189

Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Contextual Info: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

Contextual Info: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz

pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product