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Walsin Technology Corporation


Walsin Technology Corporation WLCW1005CFH15NTB INDUCTOR WIRE WOUND 15NH 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	WLCW1005CFH15NTB	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Mouser Electronics	WLCW1005CFH15NTB					1 $0.16 10 $0.12 100 $0.09 1000 $0.07 10000 $0.05	Get Quote

FH15NT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FR4 dielectric constant 4.6 Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b	PDF
SHF-0589 Abstract: MCH18 Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	SHF-0589 SHF-0589 34dBm 500mA. EDS-101242 MCH18	PDF
Stanford SHF-0289 Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189 Contextual Info: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189	PDF
SHF-0289 Abstract: SHF 189 FR4 dielectric constant vs temperature Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	SHF-0289 30dBm 250mA. EDS-101241 SHF 189 FR4 dielectric constant vs temperature	PDF
Contextual Info: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz	Original	SHF-0289 250mA) MCH18 LL1608- FH15NT	PDF