SGS-THOMSON RF TRANSISTORS Search Results

Contextual Info: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec

Contextual Info: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2903

Abstract: TSD2902 25x2mA
Contextual Info: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Contextual Info: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: 5 7 . SGS-THOMSON AM80912-030 m RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: / T T SGS-THOMSON ^ 7#• noM & E gM K S STM901-30 RF POWER MODULE LINEAR BASE STATION APPLICATIONS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: rs 7 SGS-THOMSON ^ 7 / M g[li]mi TO[M(gg_ SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING

ic 7475

Contextual Info: {Z ^ T SGS-THOMSON # . « @ [iL [iC T s M @ Ì_ S D 8 2 5 0 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS 7 • REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE

Contextual Info: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE

Dow Corning DC 11 compound

Abstract: TSTM901-30 D865 M12-022
Contextual Info: SGS-THOMSON on TSTM901 -30 RF PO W ER M O D U LE LINEAR BASE STATION A P P LIC A T IO N S PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior

Contextual Info: SGS-THOMSON A T /. [¡¡» ilLlM M nigt_ MSC81400M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > . . . REFRACT0RYV30LD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE

SD2904

Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

RF power transistors cross reference

Abstract: SD1470 M176 SD2903 uhf transistors
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &

Contextual Info: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •

Contextual Info: rZ J SGS-THOMSON ^ 7 / [«»[lUglgTOMntgl_MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC ST RIP AC PACKAGE . Pout = 2.0 W MIN. WITH 10 dB GAIN @

Contextual Info: C 7 SGS-THOMSON * 7 # . noæ iLl©Tf*Ri]0 gl MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . > • ■ . > REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE

TRANSISTOR 5DW

Contextual Info: SGS-THOMSON IU A M 0 9 1 2 -3 0 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAUCERAMIC HERMETIC PACKAGE

Contextual Info: SGS-THOMSON AM80610-018 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 18 W MIN. WITH 8.6 dB GAIN

Contextual Info: SGS-THOMSON AM82731-050 1H[ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER­ DRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: / = T SGS-THOMSON _ SD1135 RF & MICROWAVE TRANSISTORS _ UHF MOBILE APPLICATIONS • . ■ . ■ 470 MHz 12.5 VOLTS EFFICIENCY 60% COMMON EMITTER P out = 5.0 W MIN. WITH 8.5 dB GAIN -> ' f î > .280 2L STU D M122 epoxy sealed

BFR92

Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
Contextual Info: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR

Contextual Info: /=T SGS THOMSON ^ 7 / . H lMlLi gTMa>M(g§_ AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED a 15:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY

Contextual Info: SGS-THOMSON MSC82001 lELC RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED REFRACTORYyGOLD METALLIZATION VSWR CAPABILITY oo ;1 @ RATED CONDITIONS HERMETIC ST RIP AC PACKAGE P out = 1.0 W MIN. WITH 7 .0 dB GAIN @ 2 .0 GHz