SEMICONDUCTOR SANYO ZP PACKAGE Search Results

2SD1213

Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Contextual Info: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

Contextual Info: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,

svc253

Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Contextual Info: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

sj437

Abstract: SBA100-04ZP 2sk2435 2SJ456 2sk2532
Contextual Info: SAfiYO New Product New Package,ZP F*ow e t~ ’ZP" o n 1 y 2. 5 m m fcioo Mount. SANYO ne w p a c k a g e ZP o f t h e n e e d f o r s m a l l e r a nd surface thinner mount t y p e s yst ems. holds the power chip of 50W w i t h i n ♦ A d o p t i n g s t e p - s e c t i o n e d lead-frame s t r u c t u r e e l i m i n a t e s s o l d e r br i dge

2S1265

Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Contextual Info: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

Contextual Info: Ordering number:ENN6228A N-Channel Silicon M O SFET _ SA%YO 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions •L ow O N -resistan ce. • L ow Q g. unit:mm 2128 [2SK2627] 1 : Gate 2 : Source 3 : Drain SANYO : ZP Bottom view

2SK262

Contextual Info: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54

2SA1763

Abstract: IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883
Contextual Info: NEW PRODUCT SMCP Super Mini Chip Pack Transistor series The new ly d e v e lo p e d Sanyo SMCP package can make th e s e t s more compact and slim m er b e ca u se of a s u p e r mini package. _ We have v a r io u s p ro d u c ts f o r such a p p l i c a t i o n s a s shown below. In a d d it i o n , we can p ro v id e you w ith r e e l - s t y l e packing

Contextual Info: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.

sma3001

Abstract: SGF25
Contextual Info: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''

Contextual Info: 2SJ414 Ordering number : EN5367 SANYO Semiconductors DATA SHEET 2SJ414 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-state resistance. Low-voltage drive. Surface mount type device making the following possible.

7m 0880 IC

Contextual Info: Ordering number : ENN6579 NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions Features • Low noise : NF=1.0dB typ f= lG H z . unit : mm • High gain : |S 2 1 e I2=12dB typ (f= lG H z).

Contextual Info: 2SJ455 Ordering number : EN5441 SANYO Semiconductors DATA SHEET 2SJ455 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-state resistance. High-speed switching. Surface mount type device making the following possible.

Contextual Info: 2SJ415 Ordering number : EN5418 SANYO Semiconductors DATA SHEET 2SJ415 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-state resistance. Low-voltage drive. Surface mount type device making the following possible.

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

2sc4105

Abstract: 2SC4427 2SC4106 2SC4107 2SC4160 2SC4161 2SC4162 2SC4163 2SC4164 2SC4219
Contextual Info: SWITC H I N G POWER TRANSISTOR SERIES Na2 F e a t u r e s ♦ S h o r t s w i t c h i n g time ♦ High breakdown voltage ♦ Wide ASO ♦ H i g h r e l i a b i l i t y b e c a u s e of p l a n a r ¿ate H i g h — S p e e d 'I'ype U s e * Swit c h i n g regulators

2sa1850

Abstract: 2SC3953 2SA1723 2SA1848 2SC3956 2SA1849 2SC482 2SC3595 SANYO SC-62 2sc456
Contextual Info: T r a n s i s t o r s f o r V e r y H i gh-Def in i t i o n C R T D i s p l a y V i d e o O u t p u t Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.

2SA1829

Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Contextual Info: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15