SEMICONDUCTOR SANYO ZP PACKAGE Search Results

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

2SD1213

Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Contextual Info: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

Contextual Info: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,

svc253

Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Contextual Info: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t

sj437

Abstract: SBA100-04ZP 2sk2435 2SJ456 2sk2532
Contextual Info: SAfiYO New Product New Package,ZP F*ow e t~ ’ZP" o n 1 y 2. 5 m m fcioo Mount. SANYO ne w p a c k a g e ZP o f t h e n e e d f o r s m a l l e r a nd surface thinner mount t y p e s yst ems. holds the power chip of 50W w i t h i n ♦ A d o p t i n g s t e p - s e c t i o n e d lead-frame s t r u c t u r e e l i m i n a t e s s o l d e r br i dge

2S1265

Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Contextual Info: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

NPN Transistor 600V SC-62

Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Contextual Info: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and

7901S

Contextual Info: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

SANYO Replacement list

Abstract: ATP302 semiconductor Sanyo zp package SANYO Replacement transistor list 2SD2600 2SJ683 2sk4182 semiconductor Sanyo 2SB1664 2SJ684
Contextual Info: Ordering number : E I 0 1 5 3 Announcement Regarding the Discontinuation of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products have been discontinued. Please check this list carefully and contact your SANYO semiconductor sales representative if you have any

darligton transistor

Abstract: 2SD2600
Contextual Info: Ordering number : ENN*0000 2SD2600 NPN Triple Diffused Planar Silicon Darligton Transistor 2SD2600 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm

2SB1664

Contextual Info: Ordering number : ENN*0000 2SB1664 PNP Epitaxial Planar Silicon Transistor 2SB1664 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm 0000 [2SB1664]

2SK2775

Abstract: ta2760 63923
Contextual Info: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the

2SJ466

Contextual Info: Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SJ466] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the

63923

Abstract: 2SK2775 63921 63924 m1403
Contextual Info: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

Contextual Info: Ordering number:ENN6228A N-Channel Silicon M O SFET _ SA%YO 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions •L ow O N -resistan ce. • L ow Q g. unit:mm 2128 [2SK2627] 1 : Gate 2 : Source 3 : Drain SANYO : ZP Bottom view

SB002-15SPA

Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Contextual Info: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely

2SK262

Contextual Info: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54

2SK2627

Contextual Info: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54

2SK2919

Contextual Info: Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode trr=100ns . unit:mm 2128 [2SK2919] 0.6 1.0 2.54 1 2

2SA1763

Abstract: IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883
Contextual Info: NEW PRODUCT SMCP Super Mini Chip Pack Transistor series The new ly d e v e lo p e d Sanyo SMCP package can make th e s e t s more compact and slim m er b e ca u se of a s u p e r mini package. _ We have v a r io u s p ro d u c ts f o r such a p p l i c a t i o n s a s shown below. In a d d it i o n , we can p ro v id e you w ith r e e l - s t y l e packing