SEMELAB PP Search Results

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

Motorola MPSU95

Abstract: 2N3205 2S8632K SML3552 80376 2S81188 25M SOT89 2S81
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

SF107

Contextual Info: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our

D1008UK

Contextual Info: fciDE ì> _ m 01 331 07 0000 ^2 4 =111 • SfILB SEMELAB PLC ^ -3 l-Z ia SEMELAB D1008UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 40W -28V -500M H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2 DRA1N1

Contextual Info: SEMELAB 0133107 G0DG2b7 =] 37E D LTD ISHLB T-39-13 SEMELAB ji'ii >S/y<s tex' n • -fi-* BUZ 64 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm -M I * - 1 .6 1 39.5 20.3 1 A PP LIC A T IO N S • MOTOR CONTROL • SMPS 9.0 12.0 PIN 1 - G ate

Contextual Info: m fc,DE » Ô1331Ô7 00D 0T22 - G4T • SMLB - T-3V-ZS SEMELAB PLC SEMELAB D1007UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON D M O SRFFET 20W -28V-500M H Z P U SH -P U LL M ECH AN ICA L DATA Dimesnions

Contextual Info: 3 7E SEMELAB LTD 0133107 D QQQQSm Q E G3 1 1987 SEMELAB • x fc BUZ 20 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm u _ 10.3 iu . J wi 13~*1 —* max. .I m 0X- -*]3.6K+|3.6|* m 4.5ma« 5.9 min. , i 15.8 max. L.}.,- APPLICATIONS • DC/DC CONVERTERS

8023s

Abstract: ru 8015 8030d m8015s 8030S WM8030
Contextual Info: un Semelab Power Management Division DIGITAL TO ANALO G UE CO NVERTERS Semelab introduces an innovative range of Digital to Analogue Converters. e © WM8015 8 Bit Voltage output DAC with on chip N o n -V o la tile M e m ory w ith b u ffe re d reference input.

1n5806 soc23

Abstract: 1N5806-DLCC2 LCCC3 SOC23 delta plc program sample 1N5806 MTBF ER-001 TM1071 104128 80212 502
Contextual Info: 1N5806-DLCC2-PKG-EVAL Internal Qualification Aerospace Division Prepared by: Ian Charlton SEMELAB plc 2010 1N5806-DLCC2-PKG-EVAL SML-TMPL-ER-001-ISS1 1N5806-DLCC2-PKG-EVAL Contents Page

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

LCCC3

Abstract: 1n5806 soc23 SOC23 delta plc program sample 1N5806 d-5a HTCC data sheet delta plc ER-001 K 2056 1N5806
Contextual Info: 1N58061N5806-DLCC2DLCC2-PKGPKG-EVAL QAQA-RPTRPT -0031 ISSUE 1 Internal Qualification Aerospace Division Prepared by: Ian Charlton SEMELAB plc 2010 1N5806-DLCC2-PKG-EVAL SML-TMPL-ER-001-ISS1 1N5806-DLCC2-PKG-EVAL Contents Page

PT8809

Abstract: trw rf 2SC1964 BUX51 dts411 KT921A 2U 37 diode BUX49 KT936A 40340
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 NA71U NA71W KT921 A KT921B 2N5785 2N5784 BUX49 BUX49 NthAmerSemi SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech SemiconTech Hitachi Ltd Hitachi Ltd Hitachi Ltd Semelab NthAmerSemi Matsushita

P channel 600v 30a IGBT

Abstract: step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes
Contextual Info: C-Class Ultra Fast Recovery Diodes for High Speed Switching Applications M.T. Rahimo, S. R. Jones Power Division, Semelab plc., Coventry Road, Lutterworth, Leicestershire, LE17 4JB, United Kingdom. Tel + 44 1455 552505, Fax + 44 1455 552612, E-mail mrahimo@semelab.co.uk

MCA0616/1

Abstract: T-120-01B Skynet Electronic
Contextual Info: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology

2N2773

Abstract: J175 BUS24A
Contextual Info: POWER SILICON NPN Item Number Part Number Min I C 5 10 15 20 Semicoa PPC Product Solitron See Index Sid St Dvcs See Index See Index Semelab Solitron PPC Product 30 30 30 30 30 30 30 30 30 30 150 150 150 150 160 160 160 175 175 175 10 15 15 20 20 20 20 30

Contextual Info: SEMELAB NEW PRODUCT LM 137-220M NEGATIVE ADJUSTABLE VOLTAGE REGULATOR TO 220 METAL MECHANICAL DATA D im e n s io n s in m m FEATURES • HERMETIC TO 220 METAL PACKAGE • HIGH RELIABILTY • ISOLATED OPTION • MILITARY OPTION • SCREENING OPTIONS 2 80 X X

Contextual Info: bGE D • 0133107 0000^52 ööb ISMLB SEP1ELAB PLC SEMELAB D1201UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 10W -12-5V-500M HZ SINGLE ENDED MECHANICAL DATA Diniensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

semefab

Contextual Info: Semefab Wafer Fabrication Sem efab sem iconductor design and w afer fabrication Semefab is Semelab Group’s wafer fabrication facility, based in Glenrothes, Fife. As a relativ ely small b usiness, we are completely flexible. W hether you have a foundry or a custom silicon requirem ent, we work with

T3D DIODE

Abstract: T3D 65 diode t3d 68 diode Diode T3D 24 T3D 89 DIODE T3D 36 diode T3D 28 diode Diode T3D 03 T3D 78 diode Diode T3D 26
Contextual Info: SEMELAB PLC bOE Ô1331Ô7 DD0D622 Ibfl • S M L B D 4 MOS POWER EFFE T V i ■- '3 m i SML801R2CN SML751R2CN SML801R4CN SML751R4CN SEM E LAB 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.2012 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

npn 100n 1a

Abstract: KT922A 2N2650 STXB 2S01733 motorola diode 2n3253 750M10 2n697a 2S0774
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 Natl Semi See Index Micro Elecs Natl Semi See Index V/O Electro Elec Trans Solid Stlnc Sanyo Elect PhilipsElec Philips~!ec 25 30 35 40 45 :'U 55 60 65 - 70 75 - 80 85 9U PhilipsElec See Index Semelab NthAmerSemi

LD 1610

Abstract: APT9026DFN SML10026DFN APT10026DFN LE17 SML9026DFN
Contextual Info: SEMELAB PLC bOE D • Ô1331Ô? □□□□STO m i 7GT « S f l L B MOS POWER 4 iFF i mi SEME 'T * 3 ° r - 2 .^ LAB SML9026DFN 900V 36.0A 0.260 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ’dm V GS PD T J 'T STG

2N6789

Abstract: 25S1 2N6790
Contextual Info: JAN 0 5 1988 C v w l ^ f c SEMELAB LTD 37E D • ^ 0133107 000G307 SEM ELAB b ■ SNLB 1 2N 6789 2N 6790 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dim ensions in mm I 1 Î • FA ST SWITCHING f i.5 mox. i • MOTOR CONTROLS <_12.7_ mox PIN 1 -S o u rce

BUS14

Abstract: transistor 9455 BUS14A con20a 35-609 z8j378
Contextual Info: 4 05 92 12:09 0455 SEMELAB L I M I T E D 552612 — F ARNELL L w £ BUS14 3 5 ° [ - G o ^ / G i BUS14A O SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-oassivated n-p-n power transistors in a TC -3 envelooe, indended for use in converters, inverters, switching regulators, m otor control systems etc.