NPN Transistor 50A 400V
Abstract: 1200PF
Contextual Info: C o n tr a n Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available Also available on:
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470mm938mm508mm700mm+5524mm203mm10mhznpn transistor 50a 400v1200pf
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302
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SDT99071
Abstract: TO114 SDT99901 SDT55503 SDT99501 sdt99904 SDT99905 TO228AC SDT55903 SDT99502
Contextual Info: Device Type VCEO V Min/Max @ IC (A) SDT55503 SDT55504 SDT55903 SDT55904 SDT99501 SDT99502 SDT99503 SDT99504 SDT99505 100 125 100 125 100 200 300 400 500 15/75 15/75 15/75 15/75 5 10 10 10 10 100 100 100 100 200 100 85 60 40 0.80 0.80 0.80 0.80 1.00 1.00
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sdt55503sdt55504sdt55903sdt55904+11sdt99501sdt99502sdt99503sdt99504sdt99505sdt99071to114sdt99901sdt99904sdt99905to228ac
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NPN Transistor 50A 400V
Abstract: SDT99504 SDT99704 SDT99904 TO114 400v 50A Transistor
Contextual Info: -JButron Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR ¿1 CONTACT METALLIZATION Base and emitter. > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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470mm938mm508mm700mm+11524mm203mmo-11410mhz1200pfnpn transistor 50a 400vsdt99504sdt99704sdt99904to114400v 50a transistor
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2N6960
Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50
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2n65462n6547sdt14411sdt14412+16sdt14413sdt14414sdt144152n62462n6247o-1142n6960to114sdt96302sdt963032n40022n56782n4212n67422n6884sdt8756
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Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC ~T'J 3 - tT 95D 02873 T S DE | a 3 b ö b 0 2 0DD5Ö73 S |~~ ^ ©tyjCT ©ÄTTÄ[L (ia Devices, Inc MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP N U M BER IMPN EPITAXIAL PLANAR POWER TRANSISTOR x£\ CONTACT METALLIZATION
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470mm938mm508mm700mm+4524mm203mmo-11410mhz
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