SCHOTTKY B13 Search Results

case SMB

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

Contextual Info: ADVANCE INFORMATION B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

B130LB

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak

DS3004

Abstract: B130LB B130LB-13 B130LB-13-F J-STD-020A
Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B130LB Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak

Contextual Info: WEITRON B130W-30 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 1000m AMPERES 30 VOLTS P b Lead Pb -Free 1 2 SOD-123 SOD-123 Outline Dimensions Unit:mm SOD-123 Dim A B C D E H J K Min Max 2.55 2.85 1.40 1.80 0.95 1.35 0.50 0.70 0.30 REF

marking B13 diode SCHOTTKY

Abstract: diode marking b13 Marking B13 MBRS130T3 schottky B13
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

403A-03

Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon

Contextual Info: B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

DS13

Contextual Info: B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak

Contextual Info: B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak

IC 74187

Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
Contextual Info: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p

B197

Abstract: N82S83N CD 8227 N82S32N N82S90N b215 B204 B-209 B120 B199
Contextual Info: Siginetics Integrated C ircuits Schottky T T L Schottky T T L 74S Series Cont. T Y P E NO. N74S260N N74S280AN N74S287N N74S288N N74S289N D E S C R IP T IO N Dual 5-lnput N O R Gate 9-Bit Odd/Even Parity Generator/Checker . 1024-Bit Prom-3 State? o/p 256-Bit Prorn-3 State o/p

B130L

Contextual Info: LITE-ON SEMICONDUCTOR LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B130L REVERSE VOLTAGE - 30 Volts FORWARD CURRENT- 1.0 Ampere FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

B130L

Contextual Info: LITE-ON SEMICONDUCTOR B120L thru B130L REVERSE VOLTAGE - 20 to 30 Volts FORWARD CURRENT- 1.0 Ampere LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction

Contextual Info: LITE-ON SEMICONDUCTOR LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B130L REVERSE VOLTAGE - 30 Volts FORWARD CURRENT- 1.0 Ampere FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

B130L

Contextual Info: LITE-ON SEMICONDUCTOR B120L thru B130L REVERSE VOLTAGE - 20 to 30 Volts FORWARD CURRENT- 1.0 Ampere LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction

B130LB

Contextual Info: LITE-ON SEMICONDUCTOR LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B130LB REVERSE VOLTAGE - 30 Volts FORWARD CURRENT- 1.0 Ampere FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

Contextual Info: LITE-ON SEMICONDUCTOR LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B130LB REVERSE VOLTAGE - 30 Volts FORWARD CURRENT- 1.0 Ampere FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

B130LB

Contextual Info: LITE-ON SEMICONDUCTOR LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B130LB REVERSE VOLTAGE - 30 Volts FORWARD CURRENT- 1.0 Ampere FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

Contextual Info: LITE ON POWER SEMICONDUCTOR LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B130L REVERSE VOLTAGE - 30 Volts FORWARD CURRENT- 1.0 Ampere FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

Contextual Info: NEW PRODUCT B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

B130LAW

Abstract: b130law spice J-STD-020A
Contextual Info: B130LAW 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT SPICE MODEL: B130LAW Features • · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

B130L

Abstract: B130L-13-F
Contextual Info: B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B130L Features • · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Plastic Material: UL Flammability

B130L

Contextual Info: B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT Features • · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Plastic Material: UL Flammability