SCHOTTKY B13 Search Results

MUR420 diode

Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

mr852

Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

B130LB

Contextual Info: B130LB VISHAY 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly

case SMB

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

Contextual Info: ADVANCE INFORMATION B130L 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

B13LB

Contextual Info: SPICE MODELS: B130LB B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Ideally Suited for Automatic Assembly · High Temperature Soldering: 260°C/10 Second at Terminal · Guard Ring Die Construction for

Contextual Info: SPICE MODELS: B130LB B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · Schottky Barrier Chip · · · · Ideally Suited for Automatic Assembly · High Temperature Soldering: 260°C/10 Second at Terminal · Guard Ring Die Construction for

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak

B130LB

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak

Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B130LB Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak

DS3004

Abstract: B130LB B130LB-13 B130LB-13-F J-STD-020A
Contextual Info: B130LB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B130LB Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 40A Peak

Contextual Info: WEITRON B130W-30 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 1000m AMPERES 30 VOLTS P b Lead Pb -Free 1 2 SOD-123 SOD-123 Outline Dimensions Unit:mm SOD-123 Dim A B C D E H J K Min Max 2.55 2.85 1.40 1.80 0.95 1.35 0.50 0.70 0.30 REF

B180

Contextual Info: L I T E m SEMICONDUCTOR Schottky Rectifiers Electrical Characteristics Part Number IR at VR=VRRM VR 'f a v =V RRM V A Package V Fmax at I 'fsm A 25 °C 100 °C mA mA V A Surface Mount Rectifiers (Schottky Barrier B120 20 1.0 30 0.5 10 0.5 1 SMA B130 30

marking B13 diode SCHOTTKY

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

marking B13 diode SCHOTTKY

Abstract: diode marking b13 Marking B13 MBRS130T3 schottky B13
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

"MARKING B13"

Abstract: DIODE Marking B13 b13 smb MBRS130T3 Marking B13
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

403A-03

Abstract: MBRS130T3
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

403A-03

Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon

Contextual Info: MBRS130T3G, NRVBS130T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS130T3

Abstract: 403A-03 MBRS130T3G
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay