SCHOTTKY 8A Search Results

kl2 diode

Abstract: kl4 surface mount diode Marking Stempelung Diode BAT54AW BAT54CW BAT54SW BAT54W kl3 diode kl4 diode doppeldiode
Contextual Info: BAT54W .AW .CW .SW Schottky-Diodes Surface mount Schottky-Barrier Double-Diodes Schottky-Barrier Doppel-Dioden für die Oberflächenmontage Version 21.01.2004 Power dissipation – Verlustleistung 2±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung

BAT54c kl3 l43

Abstract: kl3 diode BAT54S kl1 Marking Stempelung Diode BAT54 BAT54A BAT54C BAT54S KL4 SOT-23 kl4 diode
Contextual Info: BAT54 .A .C .S Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2004-03-10 Power dissipation – Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung

d08s60

Abstract: diode 8a 600v
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

Schottky diode TO220

Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

kl4 diode

Abstract: kl3 diode BAT54 BAT54A BAT54C BAT54S kl2 diode marking code kl4 k1 diode
Contextual Info: BAT54 .A .C .S Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2004-10-08 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Repetitive peak reverse voltage

Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

Schottky diode TO220

Abstract: Q67040S4647 SDT08S60 D08S60
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

Contextual Info: C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier IF TC=135˚C = = 8A 27 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • •

80SQ05

Contextual Info: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2004-08-31 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27

Contextual Info: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2005-01-12 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27

Contextual Info: 80SQ05 80SQ05 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-10-28 Ø 5.2 Nominal Current Nennstrom ±0.2 8A ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SK86 Preliminary DIODE 8A, 60V SCHOTTKY RECTIFIER  DESCRIPTION The UTC SK86 is a schottky rectifier diode, it uses UTC’s advanced technology to provide customers with low forward voltage and high current capability, etc.

SK810

Abstract: SK82 SK83 SK84 SK85 SK86 SK88
Contextual Info: SK82 … SK810 Surface Mount Schottky-Rectifiers Schottky-Gleichrichter für die Oberflächenmontage Version 2004-07-29 Nominal current Nennstrom ±0.2 2.1 2.2 ±0.2 ±0.1 7.9 1.2 0.15 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…100 V

Contextual Info: SK82 … SK810 Surface Mount Schottky-Rectifiers Schottky-Gleichrichter für die Oberflächenmontage Version 2004-07-29 ±0.2 2.2 ±0.2 2.1 ±0.1 7.9 1.2 0.15 Nominal current Nennstrom 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…100 V

TSR860

Abstract: schottky 8a TSR835 TSR845 TSR850 rectifier l1 marking
Contextual Info: 8A Schottky Rectifier TSR835 – TSR860 8A Schottky Rectifier Features • • • • Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability High temperature soldering guaranteed: 260° C/10 seconds, /.037" 9.5mm lead length

SBL830

Abstract: SBL835 SBL840 SBL845 SBL850 SBL860
Contextual Info: SBL830–SBL860 Vishay Lite–On Power Semiconductor 8A Schottky Barrier Rectifiers Features D D D D Schottky barrier chip Guard ring for transient protection Low power loss, high efficiency High current capability and low forward voltage drop D High surge capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SB8U60 Preliminary DIODE 8A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC SB8U60 is a 8A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with sort, fast switching capability and low forward voltage drop, etc.

CREE C3D08060

Abstract: c3d08060 C3D08060G
Contextual Info: C3D08060G–Silicon Carbide Schottky Diode VRRM = 600 V Z-REC RECTIFIER IF =8A TC < 150°C Features • • • • • • • Qc Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: SDB8200PH Semiconductor Schottky Barrier Rectifier 200V, 8A POWER SCHOTTKY RECTIFIER Features  Low forward voltage drop  Low power loss and High efficiency  Low leakage current  High surge capability 1 2  Full lead Pb -free and RoHS compliant device

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

Contextual Info: Die Datasheet GB05SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge

schematic diagram NAND gates

Abstract: logic gates circuit diagram schematic of TTL OR Gates sama logic schematic diagram AND gates pin configuration of logic gates logic gates pin configuration signetics nand gates Buffers NAND Gates
Contextual Info: NAPC/ S I G N E T I C S 8250006 54C D SIGNETICS • bbSBiBM 0021771 CDRP 54C BIPOLAR LSI PRODUCTS tegrated Schottky Logic . ISL combines the features of Schottky and the density of |2L Bipolar technologies. Customer programmable LSI 2016 ISL NAND) gates 72 Schottky buffers

Contextual Info: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge