SC07580 Search Results

GCBZ670

Abstract: STB75NE75 25c016
Contextual Info: STB75NE75 N - CHANNEL 75V - 0.01 Q. - 75A - D^PAK STripFET POWER MOSFET TYPE STB75NE75 V dss R d S o i i Id 75 V < 0 . 0 1 3 Q. 75 A • . . . TYPICAL R D S (o n ) =0.01 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

SC07580

Abstract: c19a STD19NE06L
Contextual Info: STD19NE06L N - CHANNEL 60V - 0.038 Í2 - 19A - TO-251/TO-252 STripFET POWER MOSFET TYP E V dss R dS oii Id STD19NE06L 60 V < 0.0 5 Q. 19 A . • TYPICAL RDS(on) = 0.038 100% AVALANCHE TESTED . LOW GATE CHARGE . APPLICATION ORIENTED CHARACTERIZATION . ADD SUFFIX ”T4” FOR ORDERING IN TAPE

Contextual Info: STD12NE06L N - CHANNEL 60V - 0.09ft - 12A - TO-251/TO-252 STripFET POWER MOSFET TYP E V STD12NE06L R dss 60 V d S o Id ii < 0.1 2 Q. 12 A • . . . . TYPICAL RDS(on) = 0.09 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STD29NF03L N-CHANNEL 30V - 0.017 n - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYP E STD29NF03L . . . . . V dss 30 V R dS oii < 0.0 2 2 Q. Id 29 A TYPICAL RDS(on) =0.017 £2 TYPICAL Qg = 1 8nC @ 10V OPTIMAL RDs(on)xQg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008 £2 - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYP E S TB70N F03L • . . . . V d ss R dS oii Id 30 V < 0.01 Q. 70 A TYPICAL R D S (on) = 0.008 TYPICAL Qg = 35 nC @ 10V OPTIMAL RDs(on)xQg TRADE-OFF

Contextual Info: STB36NF03L N-CHANNEL 30V - 0.013 £2 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET - PRELIMINARY DATA TYP E STB36N F03L V d ss R dS oii Id 30 V < 0.018 Q. 36 A Q . TYPICAL RDS(on) =0.0 13 TYPICAL Qg = 1 8 n C @ 10V . OPTIMAL RDs(on)xQg TRADE-OFF . CONDUCTION LOSSES REDUCED

Contextual Info: STB20NE06L N - CHANNEL 60V - 0.06H - 20A - D^PAK _STripFET POWER MOSFET PRELIMINARY DATA TYPE STB20N E06L V dss R dS oii Id 60 V < 0 .0 7 Q. 20 A • . . . . TYPICAL R D S (o n ) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C

Contextual Info: STB22NE03L N - CHANNEL 30V - 0.034£2 - 22A TO-263 _ STripFET POWER MOSFET P R ELIM IN ARY DATA TYPE STB22N E03L V dss RDS on Id 30 V < 0 .0 5 Q. 22 A . . . . . TYPICAL R D S (on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STD40NF03L N-CHANNEL 30V - 0.012 n - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYP E STD40NF03L . . . . . V dss 30 V R dS oii < 0.0 1 6 Q. Id 40 A TYPICAL RDS(on) = 0.012 £2 TYPICAL Qg = 35 nC @ 10V OPTIMAL RDs(on)xQg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: s=7 SGS-THOMSON Ä 7# « « L E M « ! STD20NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE S TD 20N E06 V dss RDS on Id 60 V < 0 .0 4 0 Q 20 A . TYPICAL RDS(on) = 0.032 Q m EXCEPTIONALdv/dt CAPABILITY . 100% AVALANCHE TESTED

16NE10

Contextual Info: STD16NE10 N - CHANNEL 100V - 0.07Q - 16A - IPAK/DPAK STripFET MOSFET TYPE V dss S TD 16N E10 . m . . . . . 100 V Id *DS on < 0.1 Q 16 A TYPICAL R ds(oii) = 0.07 Q EXCEPTIO NALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STB50NE10 N - CHANNEL 100V - 0.021Î2 - 50A - D2PAK STripFET POWER MOSFET TYPE S T B 50 N E 1 0 V dss 100 V R D S o n Id < 0 .0 2 7 Q. 50 A . . . . . TYPICAL R D S (o n ) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

Contextual Info: STB36NF02L N-CHANNEL 20V - 0.016 £2 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET - PRELIMINARY DATA TYP E S TB36N F02L V dss R dS oii Id 20 V < 0.021 Q. 36 A Q . TYPICAL RDS(on) =0 .0 1 6 TYPICAL Qg = 1 9 n C @ 10V . OPTIMAL RDs(on)xQg TRADE-OFF . CONDUCTION LOSSES REDUCED

STP60NF03L

Contextual Info: STP60NF03L N-CHANNEL 30V - 0.008 £1 - 60A TO-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYP E S TP60N F03L V dss R dS oii Id 30 V < 0.0 1 0 Q. 60 A • TYPICAL RDS(on) = 0.008 . LOW THRESHOLD DRIVE DESCRIPTION This Power Mosfet is the latest development of