SC 4242 Search Results

DBA02

Abstract: CY8CTMA120
Contextual Info: 3. 7- to 13-Bit Incremental ADC 7- to 13-Bit Variable Resolution Incremental ADC Data Sheet ADCINCVR Copyright 2001-2009 Cypress Semiconductor Corporation. All Rights Reserved. PSoC Blocks API Memory Bytes Digital Analog CT Analog SC Flash RAM Pins (per

1525B

Contextual Info: y UNITRODE C UC1525B UC1527B UC2525B UC2527B UC3525B UC3527B Regulating Pulse Width Modulators FEATURES Tighter Reference Specifications BLOCK DIAGRAM VREF O SC OUT 7/95 3-59 SUPPLY POWER • DESCRIPTION The UC1525B/1527B series of pulse width modulator integrated circuits are

op-amp 4136

Abstract: 000SPS
Contextual Info: 3. 7- to 13-Bit Incremental ADC 7- to 13-Bit Variable Resolution Incremental ADC Data Sheet ADCINCVR vX.Y Copyright 2001-2008. Cypress Semiconductor. All Rights Reserved. Resources PSoC Blocks Digital Analog CT Analog SC Flash RAM Pins per External I/O

Contextual Info: 3. 7- to 13-Bit Incremental ADC 7- to 13-Bit Variable Resolution Incremental ADC Data Sheet ADCINCVR vX.Y Copyright 2001-2008. Cypress Semiconductor. All Rights Reserved. PSoC Blocks API Memory Bytes Digital Analog CT Analog SC Flash RAM Pins (per External I/O)

MM8001

Abstract: M8-001 MM8000 M8000
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­

Contextual Info: y UC5607 UNITRODE Plug and Play, 18-Line SCSI Active Terminator FEATURES DESCRIPTION • Complies with SCSI and SC S I-2 Standards T he U C 5607 provides 18 lines of active termination for a S C S I Small Computer Systems Interface parallel bus. The* SCSI standard recom­

21-1 PW

Contextual Info: y UC5603 UN ITRO DE 9-Line SCSI Active Terminator FEATURES DESCRIPTION • The UC 5603 provides 9 lines of active termination for a SC SI Small Com put­ Com plies with SCSI, SCSI-2 and SPI-2 Standards 6pF Channel C apacitance during Disconnect 100|xA Supply Current in

Contextual Info: IN T E G R A T E D C I R C U IT S UCC5611 UNITRQDE ADVANCED INFORMATION 18-Line 3-5 Volt SC SI Active Terminator, Reverse Disconnect FEATURES DESCRIPTION Complies with SCSI, SCSI-2 and SCSI-3 Standards The UCC5611 provides 18 lines of active termination for a SCSI Small

IC 7585 adjust

Contextual Info: y ^ UC5601 UNITRODE SCSI Active Terminator FEATURES DESCRIPTION Com plies with SCSI, SC S I-2 Standards 10pF C hannel C apacitance During D isconnect T he UC5601 p rovides precision resistive pull-up to a 2.9V reference fo r all 18 lines in a Sm all C om puter System s Interface SCSI bus cable. The

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

EG 3412 oscillator

Contextual Info: 1 1 application INFO available | UNITRODE UCCI 889 UCC2889 UCC3889 Off-line Power Supply Controller FE A T U R ES Transformerless Off-line Applications Ideal Primary-side Bias Supply Efficient B iC M O S Design Wide Input Range D E SC R IP T IO N The U C C 18 8 9 controller is optimized for use a s an off-line, low power, low voltage,

nec 424256

Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Contextual Info: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/W RITE MODE Description The //PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

424170 NEC

Abstract: uPD424170 424170 upd42s4170 TOED101 UPD42427 293 ez 734
Contextual Info: \ m bM575a5 O P m ^ S 1» 137 w n e c e EET NEC MOS INTEGRATED CIRCUIT f /¿ P D 4 2 S 4 1 7 0 ,4 2 4 1 7 0 ,4 2 S 4 2 7 0 ,4 2 4 2 7 0 4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The /¿PD42S4170, 424170, 42S4270, 424270 are 262 144 words by 16 bits dynamic CMOS RAMs. The fast

MPD424260

Abstract: 424260-70 nec japan
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

D42S4260

Abstract: 424260 NEC PD42S4260-70 424260-70
Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿iPD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and byte read/w rite m ode capability realize high speed access and lo w pow er consum ption.

d424256

Abstract: C4242
Contextual Info: SEC MC-424256A36 262,144 X 36-Bit Dynamic RAM Module NEC Electronics Inc. Description Pin Configuration T h e M C -4 2 4 2 5 6 A 3 6 is a p a g e m o d e d y n am ic RAM m odu le o rg a n ize d as 262,144 w ords by 3 6 bits and d e sig n ed to o p e ra te from a single + 5-volt p o w er sup­

UPD424280

Contextual Info: DATA SHEET ¿ ^ £ £ £ J D 4 5 0 7 4 r 7S4 inece MOS INTEGRATED CIRCUIT ¿¿PD42S4280, 424280 4 M BIT DYNAMIC RAM 256 K-WORD BY 18-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The ¿¿PD42S4280, 424280 are 262 144 words by 18 bits dynamic CMOS RAMs. The fast page mode and byte

NEC Japan 424210-60

Abstract: NEC 424210-60 424210-60-G UPD42S4210 424210 NEC 424210
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD 42S4210, 424210 4 M-BiT DYNAMIC RAM 256K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S4210, 424210 are 262,144 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

424260 NEC

Abstract: 424260-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte

424260L

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿iPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page m ode and

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

42S421

Abstract: I2758 uPD424210-60-G eZ 752 SCZ7 NEC Japan 424210-60 7PP4
Contextual Info: PRELIMINARY DATA SH EET_ / M O S IN T E G R A T E D CIRCUIT ¿/PD42S4210-60-G,424210-60-G 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional

D424258

Abstract: PD424258 D424* NEC
Contextual Info: NEC /¿ P D 424258 2 6 2 ,1 4 4 x 4 -B IT D Y N A M IC CMOS RAM N E C Electronics Inc. P R E LIM IN A R Y INFORMATION Description T h e ¿/PD424258 is a static-colum n, 262,144-word by 4 -b it dynam ic RAM designed to operate from a single + 5 -v o lt pow er supply. T he device is fabricated with