SBSB Search Results

MSI super Q diodes

Contextual Info: MSI ELECTRONICS INC 3SE D E3 SbSbMbb 00003^0 1 E M S I UHF/VHF ABRUPT TUNING DIODES SUPER Q @ electronics m e SER IES 1N 5 6 8 1A -1 N 5 695 A 1N 5 6 9 8A -1 N 5 710 A . . . . with capacitance tuning ratios usable over most of their operating bias voltage range • and readily matched in groups, the diodes featured here

Contextual Info: M S I SbSbMbb OODD41D llfl 4flE D ELECTRONICS INC R f l S O MSI GA-2/92 Series OA3120-QA3930 GA4120-GA4630 QA5120-QA5530 QA6120-SA6530 CONTROLLED GAMMA TUNING DIODES electronics i. T h e c a p a c i t a n c e v o l t a g e exponent, y ,is s p e c i f i e d for a p r e s c r i b e d

Contextual Info: M S I ELECTRONICS INC e le c tro n lc e m e 3SE D SbSbMbb 0000333 3 El MSI T'07-f^ m HYPERABRUPT U H F /V H F TU N IN G DIODES DHA6520. A, B, C, D thru DHA6525, A, B, C, D CATHODE The controlled C -V characteristics of this hyperabrupt tuning diode series

Contextual Info: Low Saturation Voltage Switching Transistors LSV series Bipolar transistors SBSBO E -pack SMD VcEO V cbo V cEO V ebo le IVI IVI IVI -60 -40 -7 1 E-pack (Lead type) Electrical Characteristics Absolute Maximum Ratings Type No. , Ib Pt Tstg Tj (sus) (min) i AS

15EDGRM-THT-3

Abstract: 15EDGR
Contextual Info: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON *t st a *&« *? t f n# <& V « « SBSbA « 1 •I 5 E D G R M - T H T - 3 . 5 1 5 E D G R M - T H T - 3 . 8 1 I aII * I m ik mm 300V 8A 20m fi 5000M Ü/DC1000V AC2000V/1 Min ¡^ fe E E : ÉË » fe PI

Contextual Info: n S I ELECTRONICS INC 3SE J> S8 -2/90 EB SbSbMbb 00003=14 R BIMSI S TR IP LIN E PA C K A G ED SERIES 1S800 • 1S809 electronics. 2C800 - 2C809 H Y P E R A B R U P T T U N IN G D IO D E S With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800

HFD3805

Abstract: HFE4814 HFE4848 hfd3801 HFD3882 HFD3881 HFD3850 hfe4811 HFE4807 HFD3886
Contextual Info: l-IO N F Y IilF L L I N C / h u n e y W e il MICRO 55E D • 4 5 S l f l 3 D OOl SbSb *iZ3 ■ HON1 c o n n e c t o r iz e d cuMKuiNtiN i o T -H i-< r>7 SMA Low-Profile Style SMA-LP LEDs and Integrated Transmitters The SMA-LP devices consist of a Base Part mounted in a Metal SMA Low Profile style connector. LEDs and integrated

A91A

Abstract: msi electronics MSI super Q diodes 1N5689A 1N5707A 5684A
Contextual Info: M S I ELECTRONICS I NC 3SE D E3 SbSbMhb 1 BE MSI " p 0 7 - j UHF/VHF ABRUPT TUNING DIODES SUPER Q e le c t r o n ic s , 00003=10 S E R IE S 1N5681A-1N5695A 1N5698A-1N571OA . . . . w ith capacitance tuning ratios usable over most of their operating bias voltage range • and readily matched in groups, the diodes featured here

MV1406

Abstract: MV1401-MV1412 MV1401 MV1402 MV1403 MV1404 MV1405 MV1407 MSI Electronics "MSI Electronics
Contextual Info: M S I ~ 0 ~? E LE CTRONICS INC 10E D | SbSbMbb D0D03SÔ S | MORE HYPERABRUPT TUNING DIODES electronics The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nominal capacitance are for AM applications with the lower capacitance

6525A

Abstract: 6522A DHA6520 DHA6523A DHA6525 msi electronics "MSI Electronics
Contextual Info: M S I ELECTRONICS INC 3SE D m SbSbMbb Ü0003ÔÔ 3 EiMSI T'07-f^ HYPERABRUPT U H F /V H F T U N IN G DIODES electrónica DHA6520. A, B, C, D thru DHA6525, A, B, C, D CATHODE T he c o n tro lle d C - V characteristics o f this h y p e ra b ru p t tu n in g d io d e series

Contextual Info: M S I •f ^ q -j ~/ f ELECTRONICS INC 1QE 0 | SbSb4bb D0D03Sfi S | DtfDSD MORE HYPERABRUPT TUNING DIODES electronics m e. The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of

ZC800

Abstract: ZC700 ZC898 ZC899 ZC800-ZC899
Contextual Info: M S I ELECTRONICS INC ES 3SE D SbSb4bb 00D03Û4 b E3MSI ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES e l o c t r o n O c B /ne S E R IE S ZC700-ZC714, B, C, ZC800-ZC899, A, B. The a b ru p t Z C 7 0 0 and h y p e ra b ru p t Z C 8 0 0 series tu n in g diod es to g e th e r o ffe r a selection

MV1401

Abstract: MV1402 MV1403 MV1405 MV1406 MV1407 MV1408 MV1409
Contextual Info: M S I ELECTRONICS INC 3SE D E3 SbSbMbb QG0G3fl3 electronics m e The large capacitance tu n in g ratio in the hyperabrupts listed here make them suitable fo r broad band tu n in g applications. T heir large values of nom inal capacitance are fo r A M applications w ith th e lo w e r capacitance

GA5230

Abstract: GA3120 GA3220 GA3320 GA3420 GA3530 axial DIODE 517 ga 39 diode GA432 QA31
Contextual Info: S I ELECTRONICS INC 4ÖE D • SbSbMbb OODD41D Hfl « M S I GA-2/92 Serles OA3120-QA3930 0A4120-QA4630 0Ä5120-QA5530 QA6120-SA6530 CONTROLLED GAMMA TUNING DIODES R ÍD SO electronics« The capacitance voltage exponent, y ,ia specified for a prescribed voltage range in the GA series tuning diode to facilitate uses in

Contextual Info: n S I ELECTRONICS INC bOE D SbSb4bb 0000415 7TT BB MSI 'P07'/c SOT-23 PACKAGED VARACTORS FOR LOW VOLTAGE, WIDE-BAND TUNING electronics With a capacitance tuning ratio greater than 5s1 for a reverse bias swing from 0.2 to 6 volts, the MSI ZB600^varactor diode series covers an octave

T-0.4

Contextual Info: po“,P "/aa^ “ /liöH*P/»IW/P* Kw»/««l/ SBSBE3“ BÉ'BO'ÇL 9 N I M V id d d 3 k l0 1 S D 0 Ai- H-Ud-SO" MIS DRAtflWÔ IS UNPUBLISHED. ftEVtSIÛNS L SEE SKEET 1 OF 2 A A A A A D IM E N S IO N O PPO S ITE A P P L IE S ARE S ID E AT LO CATED OF BASE

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted

2C800

Abstract: stripline 2c806 2C809 2C805 1S800 1S801 1S809 2C802 2C DIODE
Contextual Info: M S I ELECTRONICS INC 35E D ES SbSbMbb 0 G 0 0 3 lìLl ì Mi M S I STRIPLINE PACKAGED electronics. HYPERABRUPT TU N IN G DIODES With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800 series hyperabrupt diodes in stripline packages are especially suitable for

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

Contextual Info: R /2 R Ladder Sm all Outline Surface M ount .2 2 0 " D ual In-Line Thick Film Resistor N etw ork ELECTRICAL Standard Resistance Range, Ohms 1K to 100K ±2% Standard Resistance Tolerance, at 25°C Operating Temperature Range 0°C to 70°C Temperature Coefficient of Resistance

Contextual Info: LM3671 LM3671Q www.ti.com SNVS294Q – NOVEMBER 2004 – REVISED NOVEMBER 2013 LM3671, LM3671Q 2MHz, 600mA Step-Down DC-DC Converter Check for Samples: LM3671, LM3671Q FEATURES APPLICATIONS • • • • • • • • • • • • • 1 2 • • •

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

Contextual Info: W B@ ML SERIES LED PUSH BUTTON SWITCH Feature bi-color LED illuminated available 2P2T, 4P2T, lock l non-lock function Application computer products instrumentation communication equipments ► SPECIFICATIONS SWITCH SPECIFICATIONS LED SPECIFICATIONS 2 P 2 T .4 P 2 T

BIOS example source code

Abstract: 28 DSP/BIOS PC BIOS SPRA591 TMS320C6000 0x01840030
Contextual Info: Application Report SPRA591 - January 2000 DSP/BIOS by Degrees: Using DSP/BIOS Features in an Existing Application Thom Maughan, Kathryn Rafac Texas Instruments Incorporated ABSTRACT DSP/BIOSt provides a complete set of instrumented kernel services optimized for fast