SB42E05 Search Results

Contextual Info: b3E D Sb42E05 0000043 ¡=,33 HAP MICROWAVE PULSED POWER TRANSISTOR PH1214-6.OM PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System

T4 0450

Abstract: transistor j8
Contextual Info: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry

MA4P506-1072

Abstract: MA4P504-30 MA4P504-1072 MA4P506-258
Contextual Info: m an A M P company Packaged PIN Diodes MA4P100 thru 600 Series Features • • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic Packages High Reliability for Space/Military Applications