DV28120T
Abstract: DV2820 DV28120 DV2805 DV28120U ARCO 0.1 Z
Contextual Info: M/ A-COH P H I I NC _ ÖS DE 1 5 ^4 2 5 0 5 OOOCmtiö " T DV28120T • DV28120U N-Channel Enhancement-Mode RF Power FETs FEATURES Package Type T 175 MHz 2 0 -3 5 V 120 W Package Type U ■ 20:1 VSWR ■ No Thermal Runaway ■ Broadband Capability ■ Class A , B, C, D, E
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5b4250sdv28120tdv28120u0-35v+4dv28120dv2820dv2805arco 0.1 z
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J-205
Abstract: transistor j8 PH1600
Contextual Info: Afa Satellite C om m unications Power Transistor PH 1600-7.5 7.5 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System
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ph1600-7sb422ds00d12bsj-205+2transistor j8ph1600
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T4 0450
Abstract: transistor j8
Contextual Info: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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ph0404-30elsb42e05sb422dsd001177+2t4 0450transistor j8
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pha3033
Contextual Info: A ß UHF Linear Power M o d u le PHA3033-46 46 Watts, 300-325 MHz, 16 ms Pulse, 45% Duty Features Outline Drawing • Operation 300-325 MHz • NPN Silicon Power Transistors • Military Radio Application • Class AB Operation • 60 dB ALC Control Range
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