SATURATED SWITCHES Search Results

BSX20

Abstract: BSX19 BSX19-BSX20
Contextual Info: BSX19 BSX20 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.

BSX20

Abstract: BSX19 saturated switches
Contextual Info: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS

Contextual Info: FI 3QE ì> m 7121237 QQ31D37 1 • '"P3S-I3' SGS-THOMSON BSX19 BSX20 S 6 S-TH0MS0N HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated

BSX19

Abstract: BSX20 1s48 bsx 20 G-1945
Contextual Info: BSX19 BSX 20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES T he BSX 19 and BSX 20 are silic o n p la n a r e p ita x ia l NPN tran sisto rs in J e d e c T O -1 8 m etal case. T h e y are p rim a rily in te n de d fo r very high speed saturated s w itc h in g a p p lica tio n s.

marking p1S

Abstract: Q62702-F1488 GMA marking
Contextual Info: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

2N2894

Contextual Info: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

PW 2N

Abstract: 2N2894 2n320 2N3209
Contextual Info: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023

2N834

Abstract: 2N408 mps834
Contextual Info: Una. *-/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2N834-MPS834 NPN HIGH SPEED SATURATED LOGIC SWITCHES DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS PD . 826 mW • TA ' 25°C (MPS834)

2N2907A

Abstract: 2N2907 2N2905a equivalent 2N2905A 2N2905A THOMSON 2N2906A 15mAIB 2N2907A THOMSON COMPONENTS 2N2907A diagram
Contextual Info: 2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

BFR92P

Abstract: 011v1
Contextual Info: BFR92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BCR108W

Abstract: BFR92W E6327 VSO05561
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: <z/Ve.ur <$em.i~ -on.auctoi ^Products., JUnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 NPN HIGH SPEED SATURATED SWITCHES 2N930 NPN LOW LEVEL LOW NOISE AMPLIFIER DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTOR

Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR 92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2
Complementary type BFT 92 PNP 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Transistor BFT 42

Abstract: VSO05561
Contextual Info: BFR 92W 3 NPN Silicon RF Transistor
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2
Complementary type BFT 92 PNP 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFY 94 transistor

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: <Se.mi- Conductor nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 PNP Transistors SATURATED SWITCHES Type No. Case Style 2N869 TO-52 2N869A VCBO VCEO VESO (VI Mm (V) Min (V) Min 25 TO-52 25

78145

Abstract: BFR92T SC75 BFT92T
Contextual Info: BFR92T NPN Silicon RF Transistor Preliminary data 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

datesheet b a

Contextual Info: This Material NPN Transistors Discrete POWER & Signal Technologies Nati onal £T Ln Semiconductor" □ fcH NPN Saturated Switches Ll I Copyrighted □ □ □ jr a 4T Device No. Case Style 2N5769 TO-92 92 VCES* V ’CEO ^EBO v CBO (V) (V) (V) Min Min Min

BFr pnp transistor

Contextual Info: BFR 92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector durrents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

E 94733

Contextual Info: BFR92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!