SATURATED SWITCHES Search Results

BSX20

Abstract: BSX19 BSX19-BSX20
Contextual Info: BSX19 BSX20 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.

BSX20

Abstract: BSX19 saturated switches
Contextual Info: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS

Contextual Info: FI 3QE ì> m 7121237 QQ31D37 1 • '"P3S-I3' SGS-THOMSON BSX19 BSX20 S 6 S-TH0MS0N HIGH-SPEED SATURATED SWITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated

BSX19

Abstract: BSX20 1s48 bsx 20 G-1945
Contextual Info: BSX19 BSX 20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES T he BSX 19 and BSX 20 are silic o n p la n a r e p ita x ia l NPN tran sisto rs in J e d e c T O -1 8 m etal case. T h e y are p rim a rily in te n de d fo r very high speed saturated s w itc h in g a p p lica tio n s.

marking p1S

Abstract: Q62702-F1488 GMA marking
Contextual Info: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

2N2894

Contextual Info: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

PW 2N

Abstract: 2N2894 2n320 2N3209
Contextual Info: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

BCR108W

Abstract: BFR92W E6327 VSO05561
Contextual Info: BFR92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR 92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2
Complementary type BFT 92 PNP 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Transistor BFT 42

Abstract: VSO05561
Contextual Info: BFR 92W 3 NPN Silicon RF Transistor
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2
Complementary type BFT 92 PNP 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFY 94 transistor

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFr pnp transistor

Contextual Info: BFR 92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector durrents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

3009

Abstract: 2N3013 ss-112 2N3014 2n3009
Contextual Info: 2N 3009 2N 3013 2N 3014 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The 2N 3009, 2N 3013 and 2N 3014 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed, low -saturation switching application up to 300 mA.

BFr pnp transistor

Abstract: SC-75 BFT92T
Contextual Info: BFR 92T NPN Silicon RF Transistor Preliminary data 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

GMA marking

Abstract: Transistor BFR 14 BFT92 marking GMA 13793 Q62702-F1050
Contextual Info: BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VSO05561

Abstract: Transistor BFR 14
Contextual Info: BFR 92W NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MMBT2369

Abstract: MMBT2369A MMPQ2369 MMPQ3725
Contextual Info: This Surface Mount Transistors Material n~ In a fc-" fc-1 UJ O til Discrete POWER & Signal Technologies National Semiconductor' Surface Mount Transistors Copyrighted □ a a -C NPN Saturated Switches JE -0 ui By o J3 fc-1 Device No. SOT-23 Mark V Case Style

Contextual Info: 30E D • 7^237 GÜ311S1 7 'T*3Sr[\ SGS-THOMSON 2N3014 S~fi S-THOMSON HIGH SPEED SATURATED SWITCHES DESCR IPTIO N The 2N3014 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to

E 94733

Abstract: AH-1 SOT23
Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!

3009

Abstract: 2n3013 2N3014 2n3009
Contextual Info: 2N 3009 2N 3013 2N3014 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The 2N 3009, 2N 3013 and 2N 3014 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed, lo w -saturation switching application up to 300 mA.

2N5769

Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)