SATURATED Search Results

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

84-1LMI

Contextual Info: NKD-100-D 4 MILLIMETER-WAVE FREQUENCY DOUBLER MMIC 5GHz TO 24GHz Typical Applications • Narrow and Broadband Commercial and • Upconversion Stage used in MW Radio/ Optical Designs Military Radio Designs • Linear and Saturated Radio Applications GENERAL PURPOSE

Contextual Info: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

Contextual Info: Self-Cooled High Power Amplifier 50Ω 50W 500 to 1000 MHz Features Applications • • • • • • • • • • • • • • • LZY-2 saturated power 32W typ. high power with low distortion, -45 dBc typ. wide bandwidth, usable 475 - 1050 MHz high gain, 47 dB typ.

Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

transistor power rating 5w

Abstract: DU2805S transistor Pout 5W B62152A
Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices

DU1215S

Contextual Info: RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications

Transistor Equivalent list

Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
Contextual Info: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

20 amp MOSFET transistor

Abstract: MOSFET POWER TRANSISTOR DU2880V
Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

CA3273

Abstract: SOLENOID 24V DRIVER CIRCUIT 2N5320
Contextual Info: CA3273 High-Side Driver April 1994 Features Description • Equivalent High Pass P-N-P Transistor The CA3273 is a power IC equivalent of a P-N-P pass transistor operated as a high-side-driver current switch in either the saturated ON or cutoff (OFF) modes. The CA3273

transistor c 2499

Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Contextual Info: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

TLP621 optocoupler

Abstract: q621
Contextual Info: SIEMENS DUAL CHANNEL ILD621/621GB ILQ621/621GB QUAD CHANNEL MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Alternate Source to TLP621 -2/-4 and TLP621GB-2/-4 • Current Transfer Ratio CTR at lp= 5 mA ILD/Q621:50% Min. ILD/Q621GB: 100% Min. • Saturated Current Transfer Ratio (CTRs AT)

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

10H124

Abstract: MC10H115 MC10H116 MC10H124 MC10H124FN MC10H124L MC10H124P
Contextual Info: MC10H124 Quad TTL-to-MECL Translator With TTL Strobe Input The MC10H124 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The 10H part is a functional/pinout duplication of the

UDN2596A

Contextual Info: 8-CHANNEL SATURATED SINK DRIVERS Low output-saturation voltages at high load currents are provided by UDN2596A and UDN2597A sink driver ICs. These devices can be used as interface buffers between standard low-power digital logic particularly MOS and high-power loads such as relays, solenoids,

2597A

Abstract: 8-CHANNEL SATURATED SINK DRIVERS
Contextual Info: 29320.2A 8-CHANNEL SATURATED SINK DRIVERS Low output saturation voltages at high load currents are provided by U D N 2596A and U D N 2597A sink d river ICs. T hese devices can be used as interface buffers between standard low -pow er digital logic particu­

Contextual Info: 2596 , m , 2597 8-CH ANNEL SATURATED SIN K D RIVERS Low output saturation voltages at high load currents are provided by UDN2596A and UDN2597A sink driver ICs. These devices can be used as interface buffers between standard low-power digital logic particularly

OA1000

Abstract: upc 1185 h uPC 1185 DISPERSION COMPENSATING FIBER jdsu optical amplifier JDS uniphase EDFA E2000 EDFA metro fiber erbium doped JDSU oaa JDSU EDFA OA
Contextual Info: COMMUNICATIONS MODULES & SUBSYSTEMS Compact, Two-Stage Amplifier with Mid-Stage Access OA 1000 Amplifier Series Key Features • Saturated output power up to 21 dBm • Mid-stage access • Cost-effective gain flatness of ±0.75 dB • Compact size with the option of integrated PIN

jdsu oa 400

Abstract: jdsu laser diode 980 nm diode.18 OA 70 diode JDSU oaa OA400 E2000 JDSU pump jdsu OA 400 series optical amplifier module jdsu oa 400 series optical amplifier
Contextual Info: COMMUNICATIONS MODULES & SUBSYSTEMS Compact, Low Cost Single-Channel or Narrow Band Amplifiers OA 400 Amplifier Series Key Features • Compact, MSA compatible package size, 70 x 90 x 12 mm • Small signal gain, ~24 dB • Saturated output power, ~15 dBm

transistor 2n3053

Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
Contextual Info: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.

kd 616

Abstract: ana 650 SP10115 SP10116 SP10124 SP1012
Contextual Info: S P 10124 PLESSEY ECL 10,000 SERIES SEMICONDUCTORS SP10124 Q U A D T T L T O ECL TRANSLATOR P O S IT IV E LO G IC The SP1012 4 is a quad translator fo r interfacing data and control signals between a saturated log ic section and the ECL section o f dig ita l systems. The SP10124

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2710TB 5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V