SAMSUNG SEMICONDUCTOR Search Results

c8289

Abstract: C828B S3F828B C828 TB8285 TB828B S3F8285 C8245 FM24653 replacement BUZ 36
Contextual Info: S3C828B/F828B /C8289/F8289 /C8285/F8285 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.3 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no

TB825

Abstract: FM24653 ISO-14001 S3C825A S3P825A
Contextual Info: S3C825A/P825A 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible

SAMSUNG MCp

Abstract: samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability
Contextual Info: Preliminary MCP MEMORY K5P5781FCM Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. April 18, 2003 Preliminary 0.1 Revised

sony IMX 136

Abstract: IMX6DQ6SDLSRM sony sensor imx 136 sony CMOS sensor imx 136 Sony imx 134 cmos sensor sony IMX 138 sony cmos sensor imx 123 sony cmos sensor imx 174 sony CMOS sensor imx 135 sony IMX 260
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.2, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information

Contextual Info: LM8801 www.ti.com SNVS597G – APRIL 2009 – REVISED OCTOBER 2011 LM8801 High Precision 6MHz, 600 mA Synchronous Step-Down DC-DC Converter for Mobile Applications Check for Samples: LM8801 FEATURES 1 • • • • • • • 2 • • • • Over 90% efficiency at 6 MHz Operation

Contextual Info: TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103 TPS659104, TPS659105, TPS659106, TPS659107, TPS659108, TPS659109 www.ti.com SWCS046T – MARCH 2010 – REVISED SEPTEMBER 2013 Integrated Power Management Unit Top Specification Check for Samples: TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103, TPS659104, TPS659105, TPS659106,

AN5062

Contextual Info: CY7C1318BV18, CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces

Contextual Info: LP3971 www.ti.com SNVS432V – JANUARY 2006 – REVISED MAY 2013 LP3971 Power Management Unit for Advanced Application Processors Check for Samples: LP3971 FEATURES KEY SPECIFICATIONS • • 1 2 • • • • • • • • • Compatible with Advanced Applications