SAMSUNG HV CAPACITOR Search Results

ka7905

Abstract: KA7905 samsung
Contextual Info: KA7 9 X X ELECTR ONICS Industrial 3-TERMINAL 1A NEGATIVE VOLTAGE REGULATORS The KA79XX series of three-terminal negative regulators are available in TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting,

Contextual Info: CMOS VIDEO RAM KM424C256A 256KX4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port S12 x 4 bits SAM port • Performance range: Item RAM RAM RAM RAM SAM SAM RAM SAM RAM • • • • • • • • • • • • access time tRAc

samsung p28

Contextual Info: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels

Contextual Info: KSOl19Q2 Multimedia ELECTRO NICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels

KMM581000N8

Contextual Info: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs

Contextual Info: KA7 9LXXAZ ELECTRONICS Industrial 3-TERM INAL 0.1A NEGATIVE VOLTAGE REGULATORS These regulators employ internal current limiting and thermal - shutdown, making them essentially in­ destructible. FEATURES • Output current up to 100mA • No external components

KM41C257-10

Contextual Info: KM41C257 CMOS DRAM 256K x 1 Bit C M O S Dynamic R AM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C257 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its

Contextual Info: KA7 8M XX ELECTRONICS Industrial 3-TERMINAL 0.5A POSITIVE VOLTAGE REGULATORS The KA78MXXC/I series of three-terminal positive regulators are avail­ able in the TO-220 package with several fixed output voltages making it useful in a wide range of applications.

Contextual Info: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c

Contextual Info: KA79MXX I n d u st r ia l 3-TERMINAL 0.5A NEGATIVE VOLTAGE REGULATORS The KA79MXX series of 3-Term inal medium current negative voltage regulators are monolithic integrated circuits designed as fixed voltage regulators. These regulators employ internal current limiting, thermal

Contextual Info: SAMSUNG ELECTRONICS INC 42E » • 7 ^ 4 1 4 2 QG1DSQ7 7 E3SMGK KMM536512B DRAM MODULES i 5 1 2 K X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M 536512B- 7 • • • • • • • tR A C tC A C tR C 130ns 70ns

KMM536256

Contextual Info: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4

samsung roadmap

Abstract: MP6930 MP4050 MP44011 MP6923 HFC0500
Contextual Info: Monolithic Power Systems New Product for ACDC and Lighting Field Date: May 22, 2013 Confidential –Not approved for copy or Distribution The Future of Analog IC Technology ® Agenda: LED Lighting • Product Update of MPS Indoor Lighting – Non-dimming, Non-PFC

Contextual Info: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNS ELECTRONICS INC bM E T> TTbMlME DD135G7 =lflT H S H 6 K CMOS DRAM KM41C4002A 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM41C4002A is a high speed CMOS 4,194,304 bit X 1 Dynamic Random Access Memory.

Contextual Info: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • KM48C512/L/SL 7^4142 0D133bS 4b2 « S M Ö K CMOS DRAM 5 1 2 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 b it x 8 Dynamic Random Access Memory. Its

samsung "nand flash" derating

Abstract: XTAL1 4m MG30
Contextual Info: Information Manual March 1998 Lucent Technologies MG30 NAND FlashTAD — CID/AECS 4 Electrical Characteristics and Requirements 4.1 Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b? E KM418C256A/AL/ALL D • 7^4142 GGISÖT? 3b l « S r i G K CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access

Contextual Info: CMOS DRAM KM48C512/L/SL 512K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E ]> • 7^4142 KM44C1000BL GDlSbbfl ?T*i I SMGK CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its

KM41C1000CLP

Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
Contextual Info: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its