a512K
Abstract: KMM532512CV
Contextual Info: SAMSUNG ELECTRONICS INC b7E 1> • 7 ^ 4 1 4 2 001S04b b42 I SMGK KM M532512CV/CVG DRAM MODULES 5 1 2K x 3 2 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflAC • • • • • • • tcAc tflC KMM532512CV-6 60ns 15ns 110ns
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m532512cv/cvg001s04bkmm532512cva512k+420-pin72-pin22/ifkmm532512cv-6
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Contextual Info: DRAM MODULES KM M532512CV/CVG 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512CV is a512K bit x 32 Dynamic RAM high density memory module. The Samsung KMM532512CV consist of sixteen CMOS 2 5 6 K x4 bit
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OCR Scan
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m532512cv/cvg512kx32kmm532512cv-6kmm532512cv-7+6kmm532512cv-8110ns130ns150nskmm532512cva512k
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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OCR Scan
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km41c256pkm41c255jkm41c258zkm41c257p+15km41c257jkm41c257zkm41c25bpkm41c258jkm41c464pkm424c256zkm41c464pb20km64258km68512kmm5362000km23c264k 30-pin simmkm23c4000akm41c4000bj
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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km41c256pkm41c256jkm41c256zkm41c257p+12km41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c464pkmm591000ankm424c256zkmm591000bkm41c464kmm584000b4mx1 nibble
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