SA224 Search Results
SA224 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SA2-2400-CBB-STD |   | Circuit Protection - Gas Discharge Tube Arresters (GDT) - SURGE ARRESTER 2400V | Original | 341.35KB | |||
| SA2-2400-CKB-STD |   | SURGE ARRESTER 2400V | Original | 330.31KB | 4 | ||
| SA2-2400-CLB-STD |   | Circuit Protection - Gas Discharge Tube Arresters (GDT) - GDT 2400V 5KA 2 POLE | Original | 341.35KB | |||
| SA2-2400-CLT-STD |   | Gas Discharge Tube Arresters (GDT), Circuit Protection, SURGE ARRESTOR SMD | Original | 4 | |||
| SA2-2400-DLB-STD |   | SURGE ARRESTER 2400V | Original | 330.31KB | 4 | ||
| SA2-2400-DLT-STD |   | Gas Discharge Tube Arresters (GDT), Circuit Protection, SURGE ARRESTOR SMD | Original | 4 | 
SA224 Price and Stock
| Kyocera AVX Components TPSA224K050R7000CAP TANT 0.22UF 10% 50V 1206 | |||||||||||
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|   | TPSA224K050R7000 | Reel | 14 Weeks | 2,000 | 
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|   | TPSA224K050R7000 | 4,000 | 2,000 | 
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| Kyocera AVX Components TPSA224K035R6000CAP TANT 0.22UF 10% 35V 1206 | |||||||||||
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|   | TPSA224K035R6000 | Reel | 14 Weeks | 2,000 | 
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| Abracon Corporation ASA2-24.576MHZ-L-TXTAL OSC XO 24.5760MHZ HCMOS SMD | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | ASA2-24.576MHZ-L-T | Cut Tape | 805 | 1 | 
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|   | ASA2-24.576MHZ-L-T | Reel | 1,000 | 
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| Abracon Corporation ADCC-S05R5SA224WBCAPACITOR 0.22F 5.5V TH | |||||||||||
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|   | ADCC-S05R5SA224WB | Bulk | 143 | 1 | 
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|   | ADCC-S05R5SA224WB | Box | 12 Weeks | 748 | 
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|   | ADCC-S05R5SA224WB | 509 | 
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| TE Connectivity 23ESA224MMF50NFPOT 220K OHM 0.4W CARBON LINEAR | |||||||||||
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|   | 23ESA224MMF50NF | 133 | 
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|   | 23ESA224MMF50NF | 11 | 
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SA224 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN | Original | V850E/ME2 32-Bit PD703111A U16031EJ3V0UD00 U16031EJ3V0UD | |
| SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 
 | Original | S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 | |
| Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product) | Original | S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R | |
| SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J 
 | Original | Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G | |
| AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 
 | Original | Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 | |
| A039h
Abstract: 3A400 
 | Original | 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 | |
| SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 
 | Original | Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 | |
| S29WS256N
Abstract: S71WS512NE0BFWZZ 
 | Original | S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N | |
| Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing | Original | W78M32V-XBX 8Mx32 120ns 13x22mm | |
| TSOP-20 FOOTPRINT
Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J 
 | Original | S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL | |
| 10001000XXX
Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 
 | Original | W78M32V-XBX 8Mx32 120ns 13x22mm 10001000XXX PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 | |
| SA158
Abstract: SA214 8adrr 
 | Original | S29PL127H SA158 SA214 8adrr | |
| FL128P
Abstract: SPANSION FL128P 
 | Original | S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P | |
| NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256 
 | Original | S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256 | |
|  | |||
| IS29GL256Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns | Original | IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE | |
| MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 
 | Original | MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 | |
| Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features   Power supply voltage of 1.7 to 1.95V | Original | S71WSxxxJ 16-bit) 66MHz S71WS S71WS256/128/064J | |
| Spansion S29GL512N11Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages | Original | S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 | |
| S25FL129
Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 
 | Original | S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 | |
| SGA23Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages. | Original | 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23 | |
| asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 
 | Original | S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 | |
| FAA064
Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N 
 | Original | S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N | |
| HPPB
Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97 
 | Original | MBM29QM12DH MBM29QM12DH DS05-20909-2 DS05-20909-2 HPPB DS05 FPT-56P-M01 MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97 | |
| S29WS128J-MCP
Abstract: S29WS128J S29WS-J S29WS064J 
 | Original | S29WS-J 16-Bit) S29WS-J S29WS128J-MCP S29WS128J S29WS064J | |