SA194 Search Results

SA194 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SA1943		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet
2SA1941		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N)	Datasheet

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onsemi 2SA1943RTU PNP Epitaxial Silicon Transistor. - Rail/Tube (Alt: 2SA1943RTU)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA1943RTU	Tube			375	1 - 10 - 100 - 1000 $2.50 10000 $2.31	Get Quote
Rochester Electronics	2SA1943RTU		1,494		1	1 - 10 - 100 $2.86 1000 $2.56 10000 $2.41	Buy Now
Flip Electronics	2SA1943RTU		1,003			1 $1.44 10 $1.44 100 $1.44 1000 $1.44 10000 $1.44	Get Quote
Toshiba America Electronic Components 2SA1943N(S1,E,S) Trans GP BJT PNP 230V 15A 3-Pin TO-3P(N) - Bulk (Alt: 08AK8206)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	2SA1943N(S1,E,S)	Bulk			1	1 $4.43 10 $3.35 100 $2.27 1000 $1.94 10000 $1.86	Get Quote
	2SA1943N(S1,E,S)	Tube		19 Weeks, 6 Days	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	2SA1943N(S1,E,S)	Bulk	10		1	1 $4.43 10 $3.35 100 $2.27 1000 $1.94 10000 $1.86	Buy Now
TTI	2SA1943N(S1,E,S)	Tube	150		25	1 - 10 - 100 $1.22 1000 $1.20 10000 $1.18	Buy Now
Avnet Asia	2SA1943N(S1,E,S)			28 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	2SA1943N(S1,E,S)			21 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	2SA1943N(S1,E,S)		6,191			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi 2SA1943OTU PNP Epitaxial Silicon Transistor. - Rail/Tube (Alt: 2SA1943OTU)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA1943OTU	Tube			375	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark ()	2SA1943OTU	Bulk	3,319		1	1 $7.96 10 $5.15 100 $4.78 1000 $4.71 10000 $4.71	Buy Now
	2SA1943OTU	Bulk			375	1 - 10 - 100 - 1000 $3.37 10000 $3.37	Buy Now
Rochester Electronics	2SA1943OTU		3,014		1	1 - 10 - 100 $2.33 1000 $2.08 10000 $1.96	Buy Now
Master Electronics	2SA1943OTU		375			1 - 10 - 100 $2.88 1000 $2.36 10000 $2.33	Buy Now
Win Source Electronics	2SA1943OTU		136			1 - 10 $6.82 100 $4.55 1000 $4.55 10000 $4.55	Buy Now
Toshiba America Electronic Components 2SA1943-O(Q) Single Bipolar Transistor, PNP, 230 V, 15 A, 150 W, TO-3PL, 3 Pins, Through Hole - Trays (Alt: 2SA1943-O(Q))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA1943-O(Q)	Tray		21 Weeks, 3 Days	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	2SA1943-O(Q)	Bulk	4,748		1	1 $4.40 10 $2.90 100 $2.08 1000 $1.71 10000 $1.71	Buy Now
TTI	2SA1943-O(Q)	Tray			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	2SA1943-O(Q)		6,856		1	1 $2.85 10 $2.42 100 $1.94 1000 $1.64 10000 $1.56	Buy Now
EBV Elektronik	2SA1943-O(Q)		100	21 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	2SA1943-O(Q)		17,180			1 - 10 - 100 $1.24 1000 $1.03 10000 $1.03	Buy Now
Toshiba America Electronic Components 2SA1943-O - Rail/Tube (Alt: 2SA1943-O)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA1943-O	Tube		21 Weeks, 3 Days	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	2SA1943-O		713			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	2SA1943-O		17,840			1 - 10 - 100 $1.50 1000 $1.24 10000 $1.24	Buy Now

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SA194 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	s29wsxxxn s29ws256n s29ws128n s29ws064n +416-bit sa6954 ws128n ffc00	PDF
SA-275 Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document	Original	am29pdl129h s29pl129j am29pdl129j sa-275 +82aa 555 sa1127 sa1-108 sa1115 sa298 sa283 sa1117 pdl128g	PDF
71WS256NC0BAIAU Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002 Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics	Original	s71ws512nx0/s71ws256nx0 32m/16m 128/64megabit 16-bit +1154mhz s71ws s71ws512/256nx0 71ws256nc0baiau cosmoram synchronous s71ws256nc0 s71ws256nd0 s71ws512nd0 tsd084 s71ws512nc0bfiaz sa002	PDF
sanyo tuner JT 440 L Abstract: LA1888N MOC 3063 APPLICATION NOTE la1192 LA1888M fm broadcast RF preamplifier 330 803t 4b23 MPX-37 EN4823A Contextual Info: Ordering number : EN4823A Monolithic Linear 1C LA1888NM IS A 0 O I Overview The LA1888NM is a high-performance, multi-function single-chip tuner IC that was developed for use in car stereo systems. The L A I 8 8 8 NM is a second-generation singlc-chip tuner IC that integrates six blocks in a single	OCR Scan	en4823a la1888nm lai888nm la1886m +10la1883m sanyo tuner jt 440 l la1888n moc 3063 application note la1192 la1888m fm broadcast rf preamplifier 330 803t 4b23 mpx-37	PDF
AM29DL640H Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	am75pdl191bhha/am75pdl193bhha am75pdl191bhha/am75pdl193bhha am29dl640h +8fte073 pdl127 pdl127h pdl129 pdl129h cef3 sa2111 am29dl640	PDF
A039h Abstract: 3A400 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	16/4m mbm29xl12df 128m-bit 90-pin +396-ball a039h 3a400	PDF
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	am29lv2562m s29gl512n sa452 sa336 +7sa424 120r sa487 ee8000 a78000a7ffff c58000c5ffff sa4871	PDF
S29WS256N Abstract: S71WS512NE0BFWZZ Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip	Original	s71ws512ne0bfwzz s71ws512 s29ws256n 54mhz +2128mb 96-ball	PDF
Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	w78m32v-xbx 8mx32 120ns 13x22mm	PDF
TSOP-20 FOOTPRINT Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	s29pl-j 16-bit tsop-20 footprint tray datasheet bga 8x9 +3jesd 95-1, spp-010 pl032j am29pdl	PDF
10001000XXX Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166 Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	w78m32v-xbx 8mx32 120ns 13x22mm +610001000xxx pwa with 555 sa139-sa142 sa175-sa178 sa187-sa190 sa163-sa166	PDF
SA158 Abstract: SA214 8adrr Contextual Info: 63/+63/+ for Multi-Chip Products MCP 0HJDELW 0 [ %LW &026 9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $Ã6ÃthrhrÃpr ² Ã6ÃvphyÃhqiÃqrÃpr	Original	s29pl127h sa158 sa214 8adrr	PDF
NS064N Abstract: S29NS128N S29NS256N VDC048 S29NS256 Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70	Original	s29nsxxxn s29ns256n s29ns128n s29ns064n +716/8/4m 16-bit 32-word s29ns256/128/64n ns064n vdc048 s29ns256	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed	Original	mbm29qm96df-65/80 mbm29qm96df 96m-bit 80-ball +1f0212	PDF

IS29GL256 Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns	Original	is29gl256 32768k 16384k 16-bit +58-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte is29gl256-jtle	PDF
MX29GL256FLT2I-90Q Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544 Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC	Original	mx29gl256f pm1544 64kw/128kb 16-byte/8-word +1164-byte/32-word 128-word 100ma mx29gl256flt2i-90q mx29gl256fht mx29gl256 mx29gl256fht2i-90q mx29gl256fl mx29gl256fh 29gl256 mx29gl256flxfi-90q	PDF
Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V	Original	s71wsxxxj 16-bit 66mhz s71ws +1s71ws256/128/064j	PDF
Spansion S29GL512N11 Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	s29glxxxn s29gl512n s29gl256n s29gl128n +4128-word/256-byte 8-word/16-byte 27631sb2 spansion s29gl512n11	PDF
S25FL129 Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024 Contextual Info: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	s25fl129p 128-mbit 104-mhz s25fl129 +8s25fl129p0 fl129p footprint wson s25fl128p sa255 sck fab024 footprint wson-8 reader sa223 fac024	PDF
SGA23 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	16/4m mbm29xl12df 128m-bit 90-pin +296-ball sga23	PDF
asme SA388 Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ	Original	s29gl-m s29gl256ms29gl128ms29gl064ms29gl032m s29gl128ms29gl128n s29gl256ms29gl256n +14s29glxxxn 00-b-5 s29gl032m laa064 asme sa388 gl128m a2113 s29gl256 e78000 s29gl128n tsop56 s29gl128n sa32sa35 s29glxxxm bga-63	PDF
FAA064 Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N Contextual Info: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	s29gl-n s29gl256n s29gl128n faa064 +5spansion s29gl128 s29gl128 s29gl-p gl128n gl256n	PDF
HPPB Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97 Contextual Info: MBM29QM12DH -60 データシート生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及び履歴目的でのみご利用願います。	Original	mbm29qm12dh ds05-20909-2 hppb ds05 +5fpt-56p-m01 mbm29qm12dh60 mbm29qm12dh-60 sga71 diode sa97	PDF
S29WS128J-MCP Abstract: S29WS128J S29WS-J S29WS064J Contextual Info: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,	Original	s29ws-j 16-bit s29ws128j-mcp s29ws128j +1s29ws064j	PDF

SA194 Search Results

SA194 Result Highlights (2)

SA194 Price and Stock

onsemi 2SA1943RTU

Toshiba America Electronic Components 2SA1943N(S1,E,S)

onsemi 2SA1943OTU

Toshiba America Electronic Components 2SA1943-O(Q)

Toshiba America Electronic Components 2SA1943-O

SA194 Datasheets Context Search

SA6954

SA-275

71WS256NC0BAIAU

sanyo tuner JT 440 L

AM29DL640H

A039h

SA452

S29WS256N

TSOP-20 FOOTPRINT

10001000XXX

SA158

NS064N

IS29GL256

MX29GL256FLT2I-90Q

Spansion S29GL512N11

S25FL129

SGA23

asme SA388

FAA064

HPPB

S29WS128J-MCP