SA107 Search Results

EE-SX1235A-P2

Abstract: EE-SA107-P2
Contextual Info:
EE-SX1235A-P2/SA107-P2 Phototransistor Output with Snap-in Mounting Tabs
EE-SA107-P2 accommodates customized actuator that snaps into brackets
Compact and high-resolution with 0.5-mm aperture
Compatible with 1.0-mm, 1.2-mm, and 1.6-mm thick PCBs
Electrical connections using AMP

marconi 2051

Abstract: IS-136 SA1070
Contextual Info: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1070 TDMA 8-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module • ■ ■ ■ 8 Watts TDMA IS-136 +38 dBm P1dB 40 dB Gain -30°C to +85°C W Output modulation characteristics with a +37 dBm 5-watt NADC

MLAS156

Abstract: SA1076 PANDUIT connector IS-136 a2nd 3591-5002
Contextual Info: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1076 TDMA 25-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module • ■ ■ ■ 25 Watts TDMA IS-136 +45 dBm P1dB 45 dB Gain -30°C to +85°C W OUTLINE DRAWING . 870 3. 750

EE-SA107-P2

Abstract: EE-SA407-P2
Contextual Info: Photomicrosensor Actuator Mounted EE-SA107-P2 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • An actuator can be attached. Snap-in mounting model. Mountable to 1.0-, 1.2- and 1.6-mm-thick boards.

sat F connector

Abstract: EE-SA107-P2
Contextual Info: Photomicrosensor EE-SA107-P2 Actuator Mounted Dimensions Note: Features All units are in millimeters unless otherwise indicated. • • • • 175489-3 (Tyco Electronics AMP) +0.1 2.2 0 dia. 0.5 (Aperture width) An actuator can be attached. Snap-in mounting model.

EE-SA107-P2

Abstract: EE-SA407-P2
Contextual Info: Photomicrosensor Actuator Mounted EE-SA107-P2 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • ■ Absolute Maximum Ratings (Ta = 25° C) 175489-3 (Tyco Electronics AMP) 2.2+0.1 0 dia. 0.5 (Aperture width)

EE-SA107-P2

Abstract: EE-SA407-P2
Contextual Info: Photomicrosensor Actuator Mounted EE-SA107-P2 • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • • 175489-3 (Tyco Electronics AMP) 2.2+0.1 0 dia. 0.5 (Aperture width) An actuator can be attached.

Contextual Info: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1076 T D M A 3 0 - W a tt 1 .9 3 G H z to 1 .9 9 G H z L in e a r P o w e r A m p lifie r M o d u le OUTLINE i c| 45 iB Sain • PUB: +48 ¿Bm W DRAWING atkins-Johnson’s SA1076 Power

EE-SX1235A-P2

Abstract: SA107-P2 175489-3 EE-SA107-P2 EESX1235AP2
Contextual Info:
EE-SX1235A-P2/SA107-P2 Phototransistor Output with Snap-in Mounting Tabs
EE-SA107-P2 accommodates customized actuator that snaps into brackets
Compact and high-resolution with 0.5-mm aperture
Compatible with 1.0-mm, 1.2-mm, and 1.6-mm thick PCBs
Electrical connections using AMP

Contextual Info: Power Amplifiers SA1070 T D M A 8 - W a tt 1 .9 3 G H z to 1 .9 9 G H z L in e a r P o w e r A m p lifie r M o d u le • 40 ÛB Bain ■ PUB: +39 dBm ■ 0IP3:+49dBm atkins-Johnson’s SA1070 Power W Amplifier provides exceptional linearity and low vector error for

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

110R

Abstract: S29GL128N
Contextual Info: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

MX29LV640D

Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Contextual Info: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales

MX29LV640ebt

Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Contextual Info: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

29lv641

Contextual Info: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations