SA SOT89 Search Results

Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

Contextual Info: 2SA1734T1 Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

marking SA

Contextual Info: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

2SA1734R1G

Abstract: marking SA
Contextual Info: 2SA1734R1G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

Contextual Info: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter v CE<sa t hf"E Type V ^Clcont) mA mW v CBO v CEO V P.ot M in/M ax Max at lc / Vce m A /V o lts Volts at lc / Iß mA H Typ MHz Part Mark Code NPN FCX696B 250 250 500 1500 500/- 100/5 0.25

Diode Mark N10

Abstract: BZV49 diode GF M
Contextual Info: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß

FCX749

Contextual Info: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

jb sot-89

Abstract: IJU7211U NJU7211 NJU7211L sot89 JB
Contextual Info: i* * NJU7211 C-M O S 3 w i t l Œ 5MCX-, IS S «««, «ŒKÆfBfiifcSx-* <*nx u * fo m*«Œ ï, rtasxsÆSftxfcu, îtz , sa i t i T - i b 'I t i t f b , «* > B * « » iiK c < A t ìA M « t ìS f e ->*TAmizfc%TzmvTêit. ' J ' S L' í T / ( > ; X 'J - | E » ) * S W $ « Œ ,

Contextual Info: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -JANUARY 1996 Q CO M PLEM ENTARY TYPE - BST15 PA RTM AKING DETAIL — AT2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT 'v'C BO 300 Collector-Em itter Voltage V CEO 250

p96 sot89

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O PARTM ARKIN G D ETA IL - P96 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO -220 C ollector-Em itter Voltage v ceo -200 V V Em itter-Base Voltage

transistor p89

Abstract: transistor be p89
Contextual Info: SOT89 PNP SILICON PLANAR M EDIU M POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995 PARTMARKING DETAIL - O P89 ABSOLUTE M A X IM U M RATINGS. SY M BO L PARAM ETER C o lle cto r-B a se V o lta ge C olle ctor-E m itter V o lta ge E m itte r-B ase V o lta ge

Contextual Info: • bb.53^31 0 0 2 5 ^ 3 527 * A P X N A PIER PHILIPS/DISCRETE PXTA92 PXTA93 b7E D SILICON EPITAXIAL TRANSISTORS PNP high voltage transistors in a SOT89 envelope, intended for surface-mounted applications. They are primarily intended for use in telephony and professional communications equipment.

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX593 ISSUE 3 • NOVEMBER 1995_ O C O M P L IM E N T A R Y T O F M M T 4 9 3 P A R T M A R K IN G D E T A IL - P93 ABSOLUTE M A X IM U M RATINGS. PARAM ETER V A LU E SYM BO L U N IT C o lle cto r-B a se V o lta ge

FCX749

Abstract: 3emitter bst52 FCX688B FCX689B FCX690B FCX692B FCX694B FCX696B FCX789A
Contextual Info: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-Emitter v CE say Max h :E Type v CBO V v CEO V ^C(cont mA mW FCX696B 250 FCX694B 120 250 500 1500 120 500 1500 FCX692B FCX690B 70 70 2000 1500 400/- 45 45 2000 1500 400/- FCX689B 20 20 3000 1500

Contextual Info: SOT89 PNP SILICON POWER FCX789A SWITCHING TRANSISTOR ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * 8 A Peak Pulse C urrent E xcellent HFE C h a ra cte ristics up to 10 A m p s L o w S a tu ra tio n V o lta g e E.g. lO m v T y p . C o m p lim e n ta ry T yp e P a rtm a rkin g D etail -

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2 W POWER D ISSIPA TION * * * * * 6A PEAK PULSE CURRENT EXCELLENT h FE CHARACTERISTICS UP TO 6 Am ps EXTREM ELY LOW SATURATION VOLTAGE e.g. 13m V typ. EXTREM ELY LOW EQUIVALENT ON-RESISTANCE;

2N7002 PHILIPS MARKING

Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.

Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line

2005Z

Contextual Info: ZXTN2005Z 25V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

Contextual Info: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and

TRANSISTOR S2d

Abstract: lc-30mA L02M
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 SXTA92 O COM PLEM ENTARY TYPE - SXTA42 PARTMARKING DETAIL - S2D SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL Emitter-Base Voltage VALUE

Contextual Info: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,