SA 45A DIODE Search Results

ae 45a

Contextual Info: ERG75 45A • w in -a : Outline Drawings FAST RECOVERY DIODE Features • T V —?*— Pl aner chip • Soft recovery type • Stud mounted ■ E 3 i£ s: A p p lica tio n s • Switching power supplies ifc'fJl' • • ■iO'f&SSSiiJfEWiB Free-wheel diode

Contextual Info: 2SK1437 A P A d v a n c e d P e r f o r m a n c e S e rie s 2077 VDSS= 1 0 0 V N Channel Power M O S F E T F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s at Ta - 25°C Drain to Source Voltage

SSH45N15

Abstract: SSH45N20
Contextual Info: N-CHANNEL POWER MOSFETS SSH45N20/15 FEATURES • Low er R d s ON • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input ca p acita nce • Extended sa fe operating area • Improved high tem perature reliability

2SK1437

Contextual Info: Ordering num ber:EN3 5 7 5 _ 2SK1437 No.3575 N-Channel MOS Silicon FET SA\YO Very High-Speed Switching Applications 1 F eatures •Low ON-state resistance. ■Very high-speed switching. • Converters. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

Contextual Info: SA SERIES TSC S Transient Voltage Suppressor Diodes Voltage Range 5.0 to 170 Volts 500 Watts Peak Power 1.0 Watt Steady State DO-15 Features ❖ •4<• -$• Plastic package has Underwriters Laboratory Fiammability Classification 94V-0 500W surge capability at 10 X 10us waveform, duty cycle:

AN9321

Abstract: AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
Contextual Info: RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

45n06

Abstract: AN9321 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 fp45n 45N06LE
Contextual Info: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization

tt 4458

Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: COMCHIP Axial Lead Transient Voltage Suppressor SMD Diodes Specialist SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 0.033 0.84 0.028(0.71) -Glass passivated chip. 1.000(25.40)

tt 4458

Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

5KP75A

Abstract: SA75A 88 867 103
Contextual Info: TVS DIODE Electrical Characteristics SA & 5KP Series: 5 to 180 Volts Transient Voltage Suppressor 500W & 5000W Break Reverse Maximum Series: SA (500W PPK) Series: 5KP (5000W PPK) Down Stand-Off Clamping Breakdown Voltage Peak Reverse Breakdown Voltage Peak

5KP75A

Abstract: SA75A tvs diode 5000W
Contextual Info: TVS DIODE Electrical Characteristics SA & 5KP Series: 5 to 180 Volts Transient Voltage Suppressor 500W & 5000W Break Reverse Maximum Series: SA (500W PPK) Series: 5KP (5000W PPK) Down Stand-Off Clamping Breakdown Voltage Peak Reverse Breakdown Voltage Peak

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
Contextual Info: FSPYC264R, FSPYC264F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

1117B

Contextual Info: UNITRODE CORP 9347963 DE 1 ^ 3 4 7 ^ 3 □□11173 92D UN ITRODE CORP RECTIFIER ASSEMBLIES 11173 D US12-US200A USR12-USR180A High Voltage Stacks, .125 Amp to 1 Amp, Standard and Fast Recovery y -l- J ' o f* DESCRIPTION This series of High Voltage, Medium Current Stacks are assembled from

Unitrode Semiconductor

Contextual Info: MICROSEMI CORP/ lilATERTOlilN SDE =1347^3 DG12304 4T1 • U N I T D RECTIFIER ASSEMBLIES US12-US200A USR12-U£R1SQA_ - High Voltage Stacks, .125 Amp to lAm p, Standard and Fast Recovery FEATURES • C ontrolled A valan ch e C h a ra c te ristics • Recovery Tim es: to 500ns

SA5858

Abstract: 50467 SA10 SA10A SA11 SA11A SA12 SA12A SA13 SA13A
Contextual Info: I MCP SA5.0 - SA170A SERIES VKü TRANSIENT VOLTAGE SUPPRESSOR INCORPORATED Features 500 W atts Peak Pulse Power Dissipation Voltage Range 5.0 - 170 Volts 1 W a tt Steady State Power Dissipation @ T L = 7 5 °C , Lead le n g th = 9 .5 m m Constructed with Glass Passivated Die

H-17

Abstract: IRHE7230 IRHE8230
Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE823G N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Í2, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

USR Series

Abstract: US60A US45A US50A US70A SB600
Contextual Info: S ^ 7 f IEIl A S S H JE ? , * High Voltage Stacks, .125 Amp to 1 Amp, Standard and Fast Recovery USR12-uI^180A FEATU RES D ESCR IPTIO N • • • • • • This series of High Voltage, Medium Current Stacks are assembled from herm etically sealed, controlled avalanche

Contextual Info: Axial Lead Transient Voltage Suppressor SA5V0-HF Thru. SA191-HF Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Halogen Free DO-15 Features -Glass passivated chip. 1.000 25.40 MIN. 0.033(0.84) 0.028(0.71) -Low leakage.

Contextual Info: Axial Lead Transient Voltage Suppressor SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 -Glass passivated chip. -Low leakage. 1.000 25.40 MIN. -500W peak pulse power capability with a

TB334

Abstract: 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST
Contextual Info: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S

Contextual Info: HUFA76437P3, HUFA76437S3S TM Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S

SA10

Abstract: SA10A SA11 SA11A SA12 SA12A SA170 442 TVS marking code
Contextual Info: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SA SERIES 500 Watts Transient Voltage Suppressor DO-15 .140 3.6 .104(2.6) Features <{> 1.0 (25.4) MIN. DIA. P lastic p a c k a g e h a s U n d e rw rite rs L a b o rato ry .300 (7 . 6) .230 (5 .8) F ia m m a b iiity C las sific atio n 9 4 V -0

Contextual Info: Axial Lead Transient Voltage Suppressor SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 -Glass passivated chip. 0.033 0.84 0.028(0.71) -Low leakage. 1.000(25.40) MIN. -500W peak pulse power capability with a