S993 Search Results

AAW2

Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
Contextual Info: N/l IC O N D U C TO R tm S9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­

transistor 1gs

Abstract: A7840
Contextual Info: May 1996 N S9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

hann

Contextual Info: o DPAWING MADE IN THIRD ANGLE PROJECTION THIS DR AW IN G C IS U N P U B L I S H E D . COPYRIGHT 19 RELEASED BY A M P ,79 FOR PUB LICATION INCORPORATED. MOD 4 ALL INTERNATIONAL RIGHTS RESERVED. LOC BD OIST REVISIONS 35 ZONE LTR DESCRIPTION REDRAWN g REV PER EC

Contextual Info: Si3420DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V "0.5 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si5443DC

Contextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX

4009 rca

Abstract: J100 4009 not rca catalog RCA-4009 microwave tubes of700 EP63
Contextual Info: 4009 TRAVELING-W AVE TUBE 38 db Low-Level Integral Gain TENTATI VE RCA-4009 i s a lo w - p o w e r t r a v e I i ng-wave a m p l i f i e r t u b e o f t h e he I i x - t r a n s m i s s i o n - I i n e t y p e d e s i g n e d t o o p e r a t e in t h e f r e q u e n c y r a ng e

Contextual Info: Fusible Resistors Features: • Ideal circuit opening controller, disconnecting units from overload rating specified. • Flame retardant coating. • T o o low or too high ohmic value can be supplied only case by case. Rating & Dimension Rated L Max. D Max.

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

99344

Contextual Info: Si3422DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 5 @ VGS = 10 V "0.42 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI3872DV

Contextual Info: Si3872DV New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel –20 ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V "1.3 30 P-Channel rDS(on) (W) D1 S2

SI3872DV

Abstract: si3872
Contextual Info: Si3872DV New Product Vishay Siliconix N-Channel 30-V and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –20 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 0.200 @ VGS = –4.5 V "1.8 0.340 @ VGS = –2.5 V

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

diode ds 10-100 s

Abstract: "MARKING CODE LE"
Contextual Info: SÌ1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY r D S (o n) ( ß ) Ip (A) 0.280 @ V qs * -4 -5 V ± 0 .9 2 V d s (V) -8 0.380 @ VGS = —2.5 V ± 0 .7 9 ESD Protected 0.530 @ VGS = -1 .8 ± 0 .6 7 3000 V V SOT-323 SC-70 (3-LEADS) YY

S3931

Abstract: 15KV C126 C138 C1382 SAGX
Contextual Info: Bussm ann* SurgX ESD S u p p re sso rs SOT23ESD-A S u rfa c e M ount T ra n sie n t Voltage S u p p re s s o rs A u n iq u e A p p ro a c h to E S D P ro tectio n Surgx* suppressors Dy Bussm ann provide electrostatic discharge ESD protection in mobile communications, data

Contextual Info: Si5443DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BB XX

Contextual Info: TYPE CGS Computer Grade Aluminum Electrolytic Capacitor FEA TU R ES : • High Capacitance • High Voltage • High Ripple Current The CGS capacitor manufactured by Aerovox is a high performance computer grade aluminum electrolytic capacitor designed to meet the stringent requirements of power sup­

Si3420DV

Contextual Info: Si3420DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V "0.5 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

W075

Abstract: Si3422DV
Contextual Info: Si3422DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 5 @ VGS = 10 V "0.42 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si3455ADV

Contextual Info: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

G40DC5MA

Abstract: G4-DA5 G4AD18 G4-DA7 G40AC5MA G4D16L ellipse 300 ge UPS circuit diagram G40AC5 relay 12vdc coil RS-232 to RS485 converter k2 ADE
Contextual Info: Form 532-9508015— August 1995 O P T O 2 2 43044 Business Park Drive • Temecula, CA 92590-3614 . Phone: 800/321-OPTO 6786 or 909/695-3000 Fax: 800/832-0PTO (6786) or 909/695-2712 Internet Web site: http://www.opto22.com Product Support Services: 8QO/TEK-OPTO (835-6786) or 909/695-3080

Contextual Info: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET