S9012 TRANSISTOR Search Results

S9012H

Abstract: transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92
Contextual Info: MCC S9012 S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012H

Abstract: transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92
Contextual Info: MCC S9012 S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012H

Abstract: transistor s9012h S9012G S9012
Contextual Info: MCC S9012 S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Contextual Info: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

transistor s9012

Abstract: s9012 transistor S9012
Contextual Info: S9012 S9012 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃

S9012 to-92

Abstract: S9012H transistor s9012h
Contextual Info: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012H

Abstract: transistor s9012h S9012 to-92
Contextual Info: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

transistor s9012h

Abstract: S9012H S9012H TO-92
Contextual Info: MCC S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9012

Abstract: S9012H
Contextual Info: MCC S9012-G S9012-H S9012-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

transistor s9012

Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
Contextual Info: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO

s9013 transistor

Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

transistor s9012

Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR

PFNI S9012

Abstract: S9012 IC-500 S9012 2T1 pfni
Contextual Info: 1 S9012 COLLECTOR PN P General Purpose Transistors 4 % V 2v SOT-23 ra rrrrn MAXIMUM RATINGS Rating | Characteristics Value Symbol Collector-Emitter Voltage | Collector-Base Voltage Emitter-Base VOItage_ Collector Current-Continuous 1

Contextual Info: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW

S9013

Abstract: S9013 TO92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

s9013 transistor

Abstract: S9013 transistor S9013 f-30MHz transistor s9012
Contextual Info: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 SOT-23

Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

transistor s9012

Abstract: S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor
Contextual Info: S9012 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9013 Excellent hFE linearity — MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage

transistor s9012

Abstract: S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor s9012

Abstract: S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)