S75 TRANSISTOR Search Results
S75 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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S75 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FMMJ174
Abstract: MJ176
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OCR Scan |
mj174mj175mj176mj177+3 | |
VPS05560Contextual Info: SIEMENS BSP 315 SIPMOS Small-Signal Transistor 4 • P channel • Enhancement mode 5 • Logic Level 1 Pin 1 G Type 2 > • ^GS th = -0.8.-2.0 V BSP 315 VDS -50 V Type BSP 315 BSP 315 Ordering Code Q67000-S75 Q67000-S249 b -1.1 A f lDS(on) 0.8 f ì |
OCR Scan |
vps05560ot-223q67000-s75q67000-s249+2 | |
S75 J175Contextual Info: FM M J174 to FMMJ177 SOT23 P-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J174 FM M J175 FMMJ1 76 FM M J177 - S74 S75 S76 S77 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or Gate-Source Voltage 30V Continous Forward Gate Current |
OCR Scan |
fmmj177225mws75 j175 | |
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Contextual Info: SIEMENS BSP 315 SIPM OS Small-Signal Transistor • P channel • Enhancement mode • Logic Level ' ^GS th = -0.8.-2.0 V Type ^DS BSP 315 -50 V Type BSP 315 BSP 315 Ordering Code Q67000-S75 Q67000-S249 -1.1 A flDS(on) Package Marking 0.8 n SOT-223 BSP 315 |
OCR Scan |
q67000-s75q67000-s249ot-223e6327+4 | |
D226 diode
Abstract: d206 diode d227 diode transistor D227 D225 Diode d228 diode D223 DIODE d235 transistor D226 A DIODE TCS D240
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enn6266alc75804elc75804w151a-qfp100e+13 | |
D226 diode
Abstract: transistor D227 d2599 D226 A DIODE transistor d228 d227 diode Diode D188 transistor D291 transistor d288 diode d226
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enn6266lc75804elc75804w3151-qfp100e+13 | |
transistor d234
Abstract: D234 transistor d188 transistor
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pt6530ms-026bedtransistor d234d234 transistor+1 | |
3-pin D128 transistor
Abstract: transistor d288 D234 transistor D223 DIODE transistor D291 transistor D195 transistor D227 d226 diode PT6530-LQ transistor d228
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pt6530ms-026bed3-pin d128 transistortransistor d288+8 | |
D226 diode
Abstract: tr/P45/D304 diode
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ena1425lc75806pta1425-35/35d226 diode+1 | |
transistor d304
Abstract: D226 A DIODE D223 DIODE ccb format diode d229 D231 diode D226 diode D304 diode transistor d228 transistor d231
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ena1425lc75806pta1425-35/35transistor d304+9 | |
sanyo ccb
Abstract: transistor d231 diode d229
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ena1425lc75806pta1425-35/35sanyo ccb+2 | |
transistor s72
Abstract: PT6530-LQ PT653 ptc6530-lq transistor s68 DIODE S45 transistor s49 PT6530 transistor D209 D-222
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pt6530ms-026transistor s72pt6530-lq+7 | |
transistor bc 144
Abstract: TRANSISTOR
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OCR Scan |
c62702-c747fls35fcd12d515023sbgs+3 | |
s75 transistor
Abstract: KS621240 powerex ks62 transistor b 1417
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OCR Scan |
ks621240amperes/1200s75 transistorpowerex ks62+1 | |
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SOT89 transistor marking 4A
Abstract: SOT89 transistor marking 4A high frequency ZXTN19055DZTA ZXTN19055DZ s75 transistor
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zxtn19055dzsot89 transistor marking 4asot89 transistor marking 4a high frequencyzxtn19055dzta+1 | |
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Contextual Info: bDE D • 61331Ô7 OODOMTfl 37b ■ ■ SMLB SEMELAB SEMELAB PLC BDS 20 BDS 21 NEW PRODUCT SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO 220 PACKAGE M EC H A N IC A L DATA Dimensions in mm FEATURES • HERMETIC TO 220 METAL PACKAGE |
OCR Scan |
t0220s21pnp | |
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Contextual Info: * f *< UK DISCRETE SEMICONDUCTORS LLE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC 15 October 1992 Philips Semiconductors PHILIPS QD33025 Preliminary specification Philips Sem iconductors |
OCR Scan |
lle18300xqd33025fo-229bb53t31+1 | |
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Contextual Info: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V Drain-Source on-state resistance DS on 0.4 W 7 A · Enhancement mode Continuous drain current · Avalanche rated D · d /d rated Pin 1 Pin 2 Pin 3 Type |
Original |
07n20spd07n20pg-to252spu07n20+1 | |
TRANSISTOR SMD MARKING CODE kdContextual Info: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information |
OCR Scan |
ot-223q67000-s306e6327s35bq5+7 | |
s75 transistor
Abstract: BPX81-4 Diode s75 BPX-80 BPX81 BPX80
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OCR Scan |
bpx81bpx82-89bpx82bpx89+10 | |
DS75462
Abstract: S7546
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OCR Scan |
ds55460/ds75460ds5546q/ds75460ds55450/s55461+7 | |
eltec 406
Abstract: infrared pyroelectric, gas DETECTOR FLAME eltec eltec 406 me BOX9610 Pyroelectric Detectors pyroelectric TO-5 ELTEC INSTRUMENTS Light dependent resistors
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OCR Scan |
formds406123htm041eltec 406infrared pyroelectric, gas+8 | |
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Contextual Info: R F 1 MICRO DEVICES RF2132 I LINEAR POWER AMPLIFIER Typical Applications • 6V DAMPS/AMPS Cellular Handsets Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Cellular Handsets Portable Battery Powered Equipment • 6 V Japanese PDC-950 Cellular Handsets |
OCR Scan |
rf2132pdc-950800mhz950mhz+2 | |
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Contextual Info: IN N O V A T IO N a n d E X C E L L E N C E SU u N R -3 -3 /’ 0 -o $ r Single Output UNR Series Non-lsolated, 5V-to-3.3V 8 and 10 Amp, DC/DC Converters Features • Low cost! ■ +4.75V to+5.5V inputs ■ +3.3V ±33mV , 8 or 10 Amp outputs ■ 200kHz, synchronous-rectifier topology |
OCR Scan |
200khz40mvp-p60/50xiec950/en60950/ul1950+1 | |