S57253 Search Results

CK408

Abstract: CK-408
Contextual Info: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage

sup65p06

Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Si4559EY

Contextual Info: Si4559EY Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1

Si4559EY

Contextual Info: Si4559EY Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1

Contextual Info: SUP/SUB75N08-10 Siliconix N-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB40N06-25L

vishaysiliconix

Contextual Info: SUP/SUB70N06-14 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.014 70a TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP/SUB75N05-06 Siliconix N-Channel 50-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Si9945AEY

Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

SMP60N03-10L

Abstract: smp60n03
Contextual Info: SMP60N03-10L Siliconix N-Channel 30-V D-S , 150_C MOSFET, Logic Level Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.01 60 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUD50N03-10 Siliconix N-Channel 30-V D-S , 175 °C MOSFET Product Summary r DS(on) ( ^ ) Id (A) 0.010 @ V o s = 10 V ±15 ±12 V d s (V ) 30 0.019 @ VGs = 4.5 V yis te * 'VV^'oe^ 1 D O T O -252 o TT A <Ji Drain Connected to Tab G D S Top View Order Number:

Contextual Info: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: SUD25N06-45L VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET, Logic Level Product Summary V DS (V) 60 tied; Id (A) rDS(on) (£2) 0.035 @ VGs = 10 V 25 0.045 @ VGs = 4.5 V 22 -^eWPe' \T 5 ,.vv:v * * * ' " _ al » D Q TO -252 o T J Drain Connected to Tab

SUD45P03-10

Contextual Info: SUD45P03-10 Siliconix P-Channel 30-V D-S , 150_C MOSFET New Product Product Summary rDS(on) (W) ID (A)a 0.010 @ VGS = –10 V "15 0.018 @ VGS = –4.5 V "12 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET

SI9945

Abstract: Si9945AEY S-5725
Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

sup75n08

Abstract: SUP75N08-10 SUB75N08-10
Contextual Info: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUP/SUB40N06-25L Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level Product Summary V(BR)DSS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S N-Channel MOSFET SUB40N06-25L

Si4559EY

Contextual Info: Si4559EY Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary VDS (V) N Channel N-Channel 60 P Channel P-Channel –60 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1

SUB70N06-14

Abstract: SUP70N06-14
Contextual Info: SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.014 70a TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

Contextual Info: SÌ4948EY VI^HWW Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET Product Summary V d s (V) r DS(on) ( ^ ) -60 0.120 @ Vos = -1 0 V 0.150 @ VGs = —4-5 V - ite * I d (A) ±3.1 ±2.8 Alvv:v ^ p o '« 6 ' s2 Si Q Q SO -8 Si I X Gl 1~T_ ~n Di ~ n Di G2 I 4

SUD30N03-30

Abstract: 70268
Contextual Info: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB40N06-25L

Abstract: SUP40N06-25L
Contextual Info: SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 40 0.025 @ VGS = 4.5 V 40 TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB40N06-25L