SUB75P0308 Search Results

Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB75P03-08

Abstract: SUP75P03-08
Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

56088

Contextual Info: Tem ic SUP/SUB75P03-08 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) -3 0 I d (A) r DS(on) ( ^ ) 0.008 -7 5 a T0-220AB o TO-263 < ni 1 n DRAIN connected to TAB G D S Top View GD S o D SUB75P03-08 Top View SUP75P03-08

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP75P03-08

Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB75P03-08

Abstract: SUP75P03-08
Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)