S5130 Search Results

Contextual Info: Tem ic SÌ9802DY S e m i c o n d u c t o r s Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary V D S V 20 r D S (on)(^) I d (A ) 0.055 @ V os = 4.5 V ± 4 .5 0.075 @ Vo s = 3.0 V ± 3 .8 Dì U SO-8 s, Tl Q _ o, [T S2 CE G- GE D, °i ~ T |

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

simatic s5 siemens cable pc a plc

Abstract: INTERBUS SIMATIC S5 interface simatic s5 error bus fault siemens cpu 115u siemens s5 S5-115U SIMATIC S5 communication cable S5-150U Siemens SIMATIC S5 CPU manual Siemens SIMATIC S5 siemens simatic s5 S5-115U ps
Contextual Info: IBS S5 DSC/I-T Data Sheet INTERBUS Controller Board for Siemens SIMATIC S5 PLCs Data Sheet Revision B 09/1997 Product Description INTERBUS Generation 4 controller board for SIMATIC® S5 115U to 155U, 130WB and 150S PLCs. Features - INTERBUS protocol DIN E 19258

Si9802DY

Contextual Info: Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si9801DY

Abstract: SILICONIX Si9801DY
Contextual Info: Si9801DY N- and P-Channel, Reduced Qg, Fast Switching Half-Bridge Product Summary VDS V N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 0.080 @ VGS = –4.5 V "4.0 0.120 @ VGS = –3.0 V "3.0 S2 SOĆ8 S1

Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8

Si4539DY

Abstract: Si6543DQ Si9939DY
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

OTS-2L10

Contextual Info: Optiva OTS-2L10 10 MHz / L-Band Fiber Optic Link PRELIMINARY DATASHEET | OCTOBER 2014 SATCOM EMCORE’s Optiva OTS-2L10 10 MHz / L-Band Fiber Optic Links are optimized to provide transparent, simultaneous 10 MHz and L-Band signal transport for VSAT antenna applications. The Optiva OTS2L10 provides excellent isolation of the 10 MHz reference signal

Si4539DY

Abstract: Si6543DQ Si9939DY 51308
Contextual Info: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V

5070d

Abstract: S-5031C S-5031A1 S-5071A1 5131A 5130c side 5150c rotary coded switch 16 positions resistor 3.3k S-5010C
Contextual Info: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range Storage Temp. Range Sealing Method Electrical Contact Rating Non-Switching Switching Contact Resistance Insulation Resistance

SOT-563 SOT-666

Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W

si6956

Abstract: SI6956DQ
Contextual Info: SÌ9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary rDS on ( ß ) Id (A) 0.10 @ VGs = 10 V ±3.5 0.20 @ VGs = 4.5 V ±2.0 V d s (V) 20 Recommended upgrade: Si4936DY or Si9936DY Lower profile!smaller size see: Si6956DQ Di Di D2 D2 Q Q Q Q SO-8

Si1413EDH

Contextual Info: SPICE Device Model Si1413EDH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9802DY

Contextual Info: Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si4936DY

Abstract: Si6956DQ Si9936DY Si9956DY
Contextual Info: Si9956DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.5 0.20 @ VGS = 4.5 V "2.0 Recommended upgrade: Si4936DY or Si9936DY Lower profile/smaller size see: Si6956DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2

Si9803DY

Contextual Info: Si9803DY P-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "5.9 0.060 @ VGS = –3.0 V "4.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

SI1024X

Contextual Info: SPICE Device Model Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4483EDY

Contextual Info: SPICE Device Model Si4483EDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DIODE S5

Abstract: s501 diode
Contextual Info: Model S-5000 Dip Rotary Code Switch W / Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range : -25°C T O +75°C Storage Temp. Range : -25°C T O +75°C Sealing Method : O Ring Sealed Electrical Contact Rating Non-Switching

Si9410DY

Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
Contextual Info: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D

visba

Contextual Info: _ SÌ9802DY Vishay Siliconix Dual N-Ch Reduced Qg, Fast Switching MOSFET 20 R d s o n Id (A) 0.055 & V GS = 4.5V ±4.5 0.075 @ VGS = 3.0 V ±3.8 u SO-8 u D2 Di ,ut »J Dt d2 D2 Ô Si Ô s2 N-Channel M O SFET N-Channel M O SFET

Si9802DY

Contextual Info: Si9802DY Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET

ORTEL ot-dtcr-1

Abstract: ORTEL DFB laser PS-9012 OTS-1LR SATCOM OTS-1L 2 pin DC power connector optiva mib 503000
Contextual Info: OTS-1Ref Reference Oscillator Link Optiva SERIES Professional Media Transport SATCOM 1MHz to 20MHz Reference Oscillator Link Optiva® reference oscillator fiber intra-facility links are a high performance, cost-effective alternative to coaxial cable. They

OTS-1LT

Abstract: OTS-1LR OTS-1L ORTEL DFB laser SATCOM OT-CC-16-01 B7-1303-SA-IC 2 pin DC power connector
Contextual Info: OTS-1L Wideband Optical Link DATASHEET SATCOM 50MHz to 3000MHz Wideband Optical Link Optiva Wideband fiber-optic links are optimized to perform in the 50 to 3000 MHz frequency range providing transparent signal transportation for satellite antenna applications. The