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    Samtec Inc TW-10-07-L-S-471-118

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    Master Electronics TW-10-07-L-S-471-118
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    • 100 $1.92
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    Newark TW-10-07-L-S-471-118 Bulk 1
    • 1 $1.52
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    Sager TW-10-07-L-S-471-118
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    Sensata Circuit Breakers LEGBX66-1RS4-71160-1-V

    Cir Brkr HydMag
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    Master Electronics LEGBX66-1RS4-71160-1-V
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    Honeywell Sensing and Control 060-CS47116248011

    AP121CR 1A 2U 5U 6A 9A:MOD
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    Master Electronics 060-CS47116248011
    • 1 $2131.54
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    Vishay Intertechnologies TFBS4711-TT1

    - Product that comes on tape, but is not reeled (Alt: 18X0062)
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    Avnet Americas () TFBS4711-TT1 Ammo Pack 1
    • 1 $5.29
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    TFBS4711-TT1 Tape & Reel 30 Weeks 1,000
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    Newark () TFBS4711-TT1 Cut Tape 1,131 1
    • 1 $5.29
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    TFBS4711-TT1 Tape & Reel 1,131 100
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    TFBS4711-TT1 Tape & Reel 729 10
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    TFBS4711-TT1 Cut Tape 729 1
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    TFBS4711-TT1 Tape & Reel 1,000
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    TTI TFBS4711-TT1 Reel 7,000 1,000
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    Bristol Electronics TFBS4711-TT1 121
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    TME TFBS4711-TT1 1
    • 1 $4.19
    • 10 $3.64
    • 100 $3.34
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    Avnet Asia TFBS4711-TT1 39 Weeks 1,000
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    EBV Elektronik TFBS4711-TT1 2,000 27 Weeks 1,000
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    Vishay Intertechnologies TZS4711-GS08

    - Tape and Reel (Alt: TZS4711-GS08)
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    Avnet Americas TZS4711-GS08 Tape & Reel 9 Weeks 12,500
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    S4711 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S D S4711-2.3 ITS08F06 POWERLINE N-CHANNEL IGBT The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		s4711-2its08f06 PDF

    Si6433DQ

    Contextual Info: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		si6433dqs-47118--rev22-apr-96 PDF

    S4711

    Abstract: s4-711
    Contextual Info: Tem ic SÌ6433DQ S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V 12 rDS(on) ( ^ ) I d (A) 0.06 @ Vqs = -4-5 V ±4.0 0.09 @ VGS = -2.5 V ±3.0 TSSOP-8 ♦Source Pins 2, 3, 6 and 7 must be tied common. n Top View P-Channel M OSFET


    OCR Scan     		6433dqs-47118--rev22-apr-96s4711+1s4-711 PDF

    70530

    Abstract: Si6433DQ
    Contextual Info: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		si6433dqs-47118--rev22-apr-9670530 PDF

    din 41332

    Abstract: s4703 iec 384-4 ll 0007C si4ph X6936 monoethylenglykol S4710 GWA33240090096 Heatsink For stud devices - Semikron
    Contextual Info: Index Selection guide Type Application Page A axial leaded 10 G high currents 15 GM high currents / small dimensions 23 GH high currents long - life type 30 GW highest currents 36 GS Design DIN terminals 40 LF high currents with soldering - lugs 45 MDK motor starting


    Original     		\emain16din 41332s4703iec 384-4 ll+70007csi4phx6936monoethylenglykols4710gwa33240090096heatsink for stud devices - semikron PDF

    T0252

    Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
    Contextual Info: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, S4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		its08f06ds4711ds4711-3t0252+4smd making code 2fits08f06bits08f06gits08f06h PDF