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ITS08F06H Datasheets Context Search

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T0252 Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H Contextual Info: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, DS4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage	OCR Scan	ITS08F06 DS4711 DS4711-3 ITS08F06 T0252 SMD making code 2f ITS08F06B ITS08F06G ITS08F06H	PDF

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T0252

Abstract: SMD making code 2f ITS08F06 ITS08F06B ITS08F06G ITS08F06H
Contextual Info: ITS08F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R Advance Information S upersedes February 1998 version, DS4711 -2 .4 The ITS08F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

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ITS08F06 DS4711 DS4711-3 ITS08F06 T0252 SMD making code 2f ITS08F06B ITS08F06G ITS08F06H

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