S3P0 Search Results

S3P03

Abstract: MMSF3P03HD AN569 MMSF3P03HDR2 SMD310 s3p0
Contextual Info: MMSF3P03HD Preferred Device Power MOSFET 3 Amps, 30 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

augat

Abstract: MIL-T-10727 intcon MIL-G-45024
Contextual Info: AUGAT/ INTCON PRDT GP 57E D • 10^5335 0 0 02 6 1 4 30b H A U I P Female 4 Row Box Pac Features ■ High density ■ 40 to 264 Single Cluster 80 to 320 Double Cluster ■ UL Recognized % Materials ■ Insulator: Polyphenylene Sulfide UL94V0 ■ Contact: Copper alloy per Federal Specifica­

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

Contextual Info: MOTOROLA Order this document by MMSF3P02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel with Monolithic Zener ESD Protected Gate EZFETs are an advanced series of power MOSFETs which utilize

S3P02

Abstract: MMSF3P02HD
Contextual Info: MMSF3P02HD Power MOSFET 3 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These

C3-A30DX

Abstract: C3-A30FX DIODE s3l 220 volt ac to 19 v dc switching c3-a38fx 220 volt ac to 12 volt dc 110 V Ac to 110 V Dc rectifier diode S3L 54 C3A39 C3A30
Contextual Info: MRC series C3-A3x 11-pin standard relays, 3-pole, according to IEC 67-I-18a Type C3-A3x/ . V Standard relays, 3 change-over contacts Maximum contact load 10 A/250 10 A/30 1 mA/10 V 10 mA/10 V Recommended minimum contact load Contacts Material Standard Optional

S3P02

Abstract: AN569 MMSF3P02HD MMSF3P02HDR2 MMSF3P02HDR2G
Contextual Info: MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

S3P03

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M SF3P03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field E ffect Transistors SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS RDS on = 0-1 OHM MiniMOS devices are an advanced series of power MOSFETs

motorola s3p02

Abstract: S3P02 MMSF3P02HD MMSF3P02HDR2 SMD310 AN569
Contextual Info: MOTOROLA Order this document by MMSF3P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF3P02HD Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M M SF3P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

S3P03

Abstract: MMSF3P03HD AN569 MMSF3P03HDR2
Contextual Info: MMSF3P03HD Preferred Device Power MOSFET 3 Amps, 30 Volts P–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

S3P02

Contextual Info: MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

s3p03

Abstract: AN569 MMSF3P03HD MMSF3P03HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMSF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF3P03HD Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

transistor c 4236

Abstract: S3P02 MMSF3P02Z
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel w ith M onolithic Zener ESD Protected G ate M otorola Preferred Device SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.060 OHM

Contextual Info: MMSF3P02HD Power MOSFET 3 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These

S3P02

Abstract: mmsf3p02hd AN569 MMSF3P02HDR2 MMSF3P02
Contextual Info: MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

motorola s3p02

Abstract: S3P02
Contextual Info: MOTOROLA Order this document by MMSF3P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 3P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs

motorola s3p02

Abstract: S3P02 LA 4224
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t Medium Power Surface Mount Products TM O S S ingle P -C h ann el Field E ffe c t Tran sisto rs SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS M in iM O S "' d e vice s are an a d va n ce d se rie s of p o w e r M O S FE Ts