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    MMSF3P02Z Search Results

    MMSF3P02Z Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by MMSF3P02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel with Monolithic Zener ESD Protected Gate EZFETs are an advanced series of power MOSFETs which utilize


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    mmsf3p02z/dmmsf3p02z PDF

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    transistor mosfet buv18am143206evkmmbf4856lm358 ic+668hc05sc24telephone line interface circuit bc517mc68b54xc68hc705p9mpx100apbuv18a PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


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    smalles40fmgp5n60emgp20n60mgw20n60d+15mgw30n60mgy30n60dmgy40n60mgy40n60dmgw12n120mgw12n120dmgb20n40clmgb20n40mgb20n35clmtd1n60e1motorola automotive transistor coil ignitionmtsf3n03hdmotorola master selection guidemtd20n06hdmtd20n06v PDF

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


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    smalles40fmgp5n60emgp20n60mgw20n60d+15mgw30n60mgy30n60dmgy40n60mgy40n60dmgw12n120mgw12n120dmgb20n40cl340gto-220ab footprintmotorola master selection guidemmsf4p01hdr1mtd20n06hdmtd20n06hdlmtd20p06hdlmtp75n06hd PDF

    transistor c 4236

    Abstract: S3P02 MMSF3P02Z
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF3P02Z Medium Power Surface Mount Products TMOS Single P-Channel w ith M onolithic Zener ESD Protected G ate M otorola Preferred Device SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.060 OHM


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    sf3p02zmmsf3p02ztransistor c 4236s3p02 PDF