S3204 Search Results

Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

S3204-05

Abstract: S3204-06 S3204-08 S3204-09 S3584-05 S3584-06 S3584-08 S3584-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

Contextual Info: Si PIN photodiode S3204/S3584 series Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

S3204

Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

Contextual Info: Si PINフォトダイオード S3204/S3584シリーズ 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量

Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.47)/ Window Material Package Active Area Effective Size Active Area (mm) (mm2) 25 S5106 @/R Ceramic 5X5 S5107 ® /R Chip-carrier 10X10 100 S3590-01 S3590-08 ® /R S3204-08 @/R S3584-08 S3588-08 Photo Sensitivity S Typ. (A/W)

Contextual Info: Large-area Si PIN Photodiodes Type N o. R e m a rk s O u t-*1 line W in d o w *2 M a te ria l A c tiv e *3 A re a S p e c tra l R esponse R ange 300 f i m Wafer Thickness Types 10 x 10 mm active area S3590-08 o 10 x 10 10 x 20 mm active area 10 X 20 S3204-08

S3204-08

Abstract: S3204-09 S3584-08 S3584-09
Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

S3204-05

Abstract: S3204-06 S3204-08 S3204-09 S3584-05 S3584-06 S3584-08 S3584-09
Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

PIN photodiode 420 nm

Abstract: S3584-06 S3204-05 S3204-06 S3204-08 S3204-09 S3584-05 S3584-08 S3584-09 Scintillation
Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

scintillator

Abstract: S3204-05 S3204-08 S3584-05 S3584-08
Contextual Info: PHOTODIODE Si PIN photodiode S3204/S3584 series Large area sensors for scintillation detection S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window. Features Applications l Higher sensitivity and low dark current than conventional type

S3588-01

Abstract: S3590-01 S2744-01 S2744
Contextual Info: Large-area Si PIN Photodiodes P h o to S e n s itiv ity S T y p . T ype N o. R e m a rk s O u t* ’ lin e W in d o w * 2 M a te r ia l A c tiv e * 3 A re a S p e c tr a l R esponse R ange m m (n m ) Peak S e n sitivity W avelength Ap (n m ) 3 20 to 1060

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active

P4950

Contextual Info: Si PIN Photodiodes 5 Type No. I Dimensional Outline (P.49, 50)/ Window Material *1 Package (mm) S5106 /R Ceramic S5107 @ /R Chip-carrier 57509 ; ; Active Effective j Active Area Size; Area ! 5 x 5 10 x 10 j : 2xio ® r ; (mm2) Spectral Response Range

Si2302DS 2A

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY VDS V 30

Contextual Info: SOLID STATE D I V I S I O N TECHNICAL INFORMATION SD-37 Characteristics and use of Charge amplifier Table of contents 1. General description •···································································································· 3

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: S-320 320W Single Output Switching Power Supply series • Features : •AC input range selectable by switch •Protections: Short circuit / Overload / Over voltage / Over temperature •Forced air cooling by built-in DC fan •Cooling Fan ON-OFF auto control

H4083

Abstract: charge amplifier S3590 918* replacement GAMMA Radiation Detector SE-171 Si pin photodiode module
Contextual Info: MODULE Charge amplifier H4083 For radiation and high energy particle detection H4083 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used

ttl photodiode amplifier

Abstract: photo sensor s4810 photo sensor IC of light photo sensor Ic circuit and its type S6986
Contextual Info: Photo ICs A photodiode and signal processing circuit are integrated Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature pack­ ages, these photo ICs are especially suited for miniaturization of electronic