S300J Search Results

Contextual Info: S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N45

Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50
Contextual Info: SSR1N50/45 SSU1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: S300BM R THRU S300YM(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 300A High Surge Capability Types Up to 1600V V RRM 300Amp Rectifier 100~1600 Volts Maximum Ratings DO-9(DO-205AB) Operating Temperature: -55 to Storage Temperature: -55

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

2N6785

Abstract: 2N6786 2N6788 2N8785 2N8786
Contextual Info: 37E D SEMELAB LT» • Û1331Ô7 0GDG3D3 1 JAN 0 5 MBB SEMELAB 2N 6785 2N 6786 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 APPLICATIONS T 8.5 • FAST SWITCHING max. X k-5.H • MOTOR CONTROLS . 6.6 . max .9 .4 . max PIN 1 -S o u rce

IRFP420

Abstract: IRFP421
Contextual Info: 7 9 6 4 1 4 2 S A M S U N G S E M I C O N D U C T OR DE I7^4145 INC 98D 0 5 2 0 9 . '• DODSEGT 7 | D 7"- • N-CHAÑNEL POWER MOSFETS iK h P 4 Í¿ u /4 z i m z z m z ö FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness