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    S300J Search Results

    S300J Datasheets (2)

    GeneSiC Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    S300J
    GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 600V 300A DO205AB Original PDF 2
    S300JR
    GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 600V 300A DO205AB Original PDF 2
    SF Impression Pixel

    S300J Price and Stock

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    Kyocera AVX Components 600S300JW250T

    MLC 600 - Tape and Reel (Alt: 600S300JW250T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 600S300JW250T Tape & Reel 12 Weeks 2,000
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    Kyocera AVX Components 600S300JT250XT

    Cap Cer SMD 0603 30pF 5% 250V NP0 T&R - Tape and Reel (Alt: 600S300JT250XT)
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    Avnet Americas 600S300JT250XT Tape & Reel 12 Weeks 2,000
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    TTI 600S300JT250XT Reel 500
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    Richardson RFPD 600S300JT250XT 1,500
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    Navitas Semiconductor S300J

    - Bulk (Alt: S300J)
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    Avnet Americas S300J Bulk 10 Weeks 8
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    Gowanda Electronics Corporation ER17S300JR

    M39010 LEVEL-R MOLDED UNSHIELDED INDUCTOR - Bulk (Alt: ER17S300JR)
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    Avnet Americas ER17S300JR Bulk 1
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    Vishay Intertechnologies RL20S300JBSL

    - Bulk (Alt: RL20S300JBSL)
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    Avnet Americas RL20S300JBSL Bulk 28 Weeks 100
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    S300J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.


    Original
    s300bs300jrs300ds300e+2s300gs300j PDF

    Contextual Info: S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.


    Original
    s300bs300jrs300ds300e+2s300gs300j PDF

    Contextual Info: S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.


    Original
    s300bs300jrs300ds300e+2s300gs300j PDF

    1N45

    Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50
    Contextual Info: SSR1N50/45 SSU1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    ssr1n50/45ssu1n50/45ssr1n50/u1n50ssr1n45/u1n45+10ssr1n50/1n45ssu1n50/1n45widths3007tb41421n45mosfet 1n45ssu1n501n45 mosfet250mu1n50 PDF

    Contextual Info: S300BM R THRU S300YM(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 300A High Surge Capability Types Up to 1600V V RRM 300Amp Rectifier 100~1600 Volts Maximum Ratings DO-9(DO-205AB) Operating Temperature: -55 to Storage Temperature: -55


    Original
    s300bms300ym300ampdo-205ab+5s300dms300ems300gms300jms300km PDF

    f9520

    Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
    Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability


    OCR Scan
    irf9520/9521/9522/9523irf9520irf9521f9522+7irf9523irf9520/9521f9520gs 9521irf9520 samsung9521ltsj PDF

    2N6785

    Abstract: 2N6786 2N6788 2N8785 2N8786
    Contextual Info: 37E D SEMELAB LT» • Û1331Ô7 0GDG3D3 1 JAN 0 5 MBB SEMELAB 2N 6785 2N 6786 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 APPLICATIONS T 8.5 • FAST SWITCHING max. X k-5.H • MOTOR CONTROLS . 6.6 . max .9 .4 . max PIN 1 -S o u rce


    OCR Scan
    t-39-072n67852n67862n678s+42n8786tc-262n67882n8785 PDF

    IRFP420

    Abstract: IRFP421
    Contextual Info: 7 9 6 4 1 4 2 S A M S U N G S E M I C O N D U C T OR DE I7^4145 INC 98D 0 5 2 0 9 . '• DODSEGT 7 | D 7"- • N-CHAÑNEL POWER MOSFETS iK h P 4 Í¿ u /4 z i m z z m z ö FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness


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    irfp420irfp421irfp422irfp423 PDF