S2A TRANSISTOR Search Results

Contextual Info: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

SA201

Contextual Info: polyfet rf devices SA201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SP202

Contextual Info: polyfet rf devices SP202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

S8201

Abstract: TRANSISTOR S2A
Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SC201

Contextual Info: polyfet rf devices SC201 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,

SK202

Contextual Info: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

S8202

Abstract: TRANSISTOR S2A
Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SP203

Contextual Info: polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SK204

Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

TRANSISTOR S2A

Abstract: SD201
Contextual Info: polyfet rf devices SD201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended

TRANSISTOR SP201

Abstract: SP201 TRANSISTOR S2A
Contextual Info: polyfet rf devices SP201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

TRANSISTOR S2A

Abstract: SP204
Contextual Info: polyfet rf devices SP204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SQ201

Contextual Info: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

TPC6001

Abstract: transistor marking S2A s2a transistor
Contextual Info: TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC6001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)

smd TRANSISTOR code marking w2t

Abstract: MARKING SMD PNP TRANSISTOR w2t w2t smd transistor TRANSISTOR SMD MARKING CODE s2a SMD TRANSISTOR w2w smd marking e2w smd code W2W transistor e2w lm1455 marking code w2T
Contextual Info: N Table of Contents QML Certification .1 National’s Space-Level Product Families .1

2N1165

Abstract: 2n11 2N1163 2N2445 Germanium power
Contextual Info: germanium power transistors 151 See 'Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 15.0 Amp BREAKDOWN VOLTAGES TYPE NUMBIER 2N512 2N512j' 2N5121~ CUTOFF CURRENT hFE V CB VCE VEB -40 -60 -80 -30 -40 -45 -30 -30 -30 @ @ @ VCE Ic (A) Min. -2.0 -2.0 -2.0

TC227

Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

fd3055

Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

TK2048

Abstract: 104PW
Contextual Info: TEKTRONIX I N C / INTEGRATED SIE D • Ö^DblSM GOGQlöE 3 ■ 7 ~ y /s s T C I / I L Z i\ INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES ■ . : SPECIFICATIONS OPERATINGINFORMATION; TK2048 CCD IMAGER ■ Front illuminated or thinned back illuminated

TRANSISTOR S2d

Abstract: TK-10 TRANSISTOR S1d
Contextual Info: TEKTRONIX INC/ INTEGRATE» T C I C i/ l\ SIE » a^Qbiaq qddditm INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES q • SPECIFICATIONS ] OPERATING INFORMATION ! ü Front Illuminated or thinned back Illuminated* ü Larga area format: 1024 by 1024 pixels

Contextual Info: Fault Protection and Detection, 10 Ω RON, Dual SPDT Switch ADG5436F Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Interrupt flags indicate fault status

FD3055

Abstract: Fp3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

TRANSISTOR S2A

Abstract: transistor marking S2A s2a transistor
Contextual Info: FJX3906 FJX3906 General Purpose Transistor 2 1 PNP Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCES Collector-Emitter Voltage