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    S2A TRANSISTOR Search Results

    S2A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    S2A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


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    FJX3906 SC-70 FJX3906TF PDF

    SA201

    Contextual Info: polyfet rf devices SA201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


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    SA201 SA201 PDF

    SP202

    Contextual Info: polyfet rf devices SP202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SP202 SP202 PDF

    S8201

    Abstract: TRANSISTOR S2A
    Contextual Info: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    S8201 S8201 TRANSISTOR S2A PDF

    SC201

    Contextual Info: polyfet rf devices SC201 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,


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    SC201 SC201 PDF

    SK202

    Contextual Info: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SK202 SK202 PDF

    S8202

    Abstract: TRANSISTOR S2A
    Contextual Info: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    S8202 S8202 TRANSISTOR S2A PDF

    SP203

    Contextual Info: polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SP203 SP203 PDF

    SK204

    Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SK204 SK204 PDF

    TRANSISTOR S2A

    Abstract: SD201
    Contextual Info: polyfet rf devices SD201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended


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    SD201 TRANSISTOR S2A SD201 PDF

    TRANSISTOR SP201

    Abstract: SP201 TRANSISTOR S2A
    Contextual Info: polyfet rf devices SP201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SP201 TRANSISTOR SP201 SP201 TRANSISTOR S2A PDF

    TRANSISTOR S2A

    Abstract: SP204
    Contextual Info: polyfet rf devices SP204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SP204 TRANSISTOR S2A SP204 PDF

    Contextual Info: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


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    SK202 PDF

    SQ201

    Contextual Info: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


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    SQ201 SQ201 PDF

    TPC6001

    Abstract: transistor marking S2A s2a transistor
    Contextual Info: TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC6001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)


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    TPC6001 TPC6001 transistor marking S2A s2a transistor PDF

    smd TRANSISTOR code marking w2t

    Abstract: MARKING SMD PNP TRANSISTOR w2t w2t smd transistor TRANSISTOR SMD MARKING CODE s2a SMD TRANSISTOR w2w smd marking e2w smd code W2W transistor e2w lm1455 marking code w2T
    Contextual Info: N Table of Contents QML Certification .1 National’s Space-Level Product Families .1


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    1-800-52-HI-REL 1-800-52-HI-REL. smd TRANSISTOR code marking w2t MARKING SMD PNP TRANSISTOR w2t w2t smd transistor TRANSISTOR SMD MARKING CODE s2a SMD TRANSISTOR w2w smd marking e2w smd code W2W transistor e2w lm1455 marking code w2T PDF

    2N1165

    Abstract: 2n11 2N1163 2N2445 Germanium power
    Contextual Info: germanium power transistors 151 See 'Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 15.0 Amp BREAKDOWN VOLTAGES TYPE NUMBIER 2N512 2N512j' 2N5121~ CUTOFF CURRENT hFE V CB VCE VEB -40 -60 -80 -30 -40 -45 -30 -30 -30 @ @ @ VCE Ic (A) Min. -2.0 -2.0 -2.0


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    2N512 2N512j' 2N5121~ TRANSIS2N1164A 2N1165 2N1165A 2N1166 2N1167A 2N2Ei12 2n11 2N1163 2N2445 Germanium power PDF

    TC227

    Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


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    IRFR9220, IRFU9220 TA17502. TC227 PDF

    fd3055

    Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


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    RFD3055, RFD3055SM, RFP3055 TA49082. fd3055 PDF

    TK2048

    Abstract: 104PW
    Contextual Info: TEKTRONIX I N C / INTEGRATED SIE D • Ö^DblSM GOGQlöE 3 ■ 7 ~ y /s s T C I / I L Z i\ INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES ■ . : SPECIFICATIONS OPERATINGINFORMATION; TK2048 CCD IMAGER ■ Front illuminated or thinned back illuminated


    OCR Scan
    TK2048 104PW PDF

    TRANSISTOR S2d

    Abstract: TK-10 TRANSISTOR S1d
    Contextual Info: TEKTRONIX INC/ INTEGRATE» T C I C i/ l\ SIE » a^Qbiaq qddditm INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES q • SPECIFICATIONS ] OPERATING INFORMATION ! ü Front Illuminated or thinned back Illuminated* ü Larga area format: 1024 by 1024 pixels


    OCR Scan
    TK1024A/October TK1024 TRANSISTOR S2d TK-10 TRANSISTOR S1d PDF

    Contextual Info: Fault Protection and Detection, 10 Ω RON, Dual SPDT Switch ADG5436F Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Interrupt flags indicate fault status


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    ADG5436F 16-Lead CP-16-17) ADG5436FBRUZ ADG5436FBRUZ-RL7 ADG5436FBCPZ-RL7 PDF

    FD3055

    Abstract: Fp3055
    Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055 PDF

    TRANSISTOR S2A

    Abstract: transistor marking S2A s2a transistor
    Contextual Info: FJX3906 FJX3906 General Purpose Transistor 2 1 PNP Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCES Collector-Emitter Voltage


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    FJX3906 OT-323 TRANSISTOR S2A transistor marking S2A s2a transistor PDF