S2A TRANSISTOR Search Results
S2A TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
S2A TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The |
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FJX3906 SC-70 FJX3906TF | |
SA201Contextual Info: polyfet rf devices SA201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. |
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SA201 SA201 | |
SP202Contextual Info: polyfet rf devices SP202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
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SP202 SP202 | |
S8201
Abstract: TRANSISTOR S2A
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S8201 S8201 TRANSISTOR S2A | |
SC201Contextual Info: polyfet rf devices SC201 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances, |
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SC201 SC201 | |
SK202Contextual Info: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
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SK202 SK202 | |
S8202
Abstract: TRANSISTOR S2A
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S8202 S8202 TRANSISTOR S2A | |
SP203Contextual Info: polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
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SP203 SP203 | |
SK204Contextual Info: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
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SK204 SK204 | |
TRANSISTOR S2A
Abstract: SD201
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SD201 TRANSISTOR S2A SD201 | |
TRANSISTOR SP201
Abstract: SP201 TRANSISTOR S2A
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SP201 TRANSISTOR SP201 SP201 TRANSISTOR S2A | |
TRANSISTOR S2A
Abstract: SP204
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SP204 TRANSISTOR S2A SP204 | |
Contextual Info: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. |
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SK202 | |
SQ201Contextual Info: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE |
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SQ201 SQ201 | |
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TPC6001
Abstract: transistor marking S2A s2a transistor
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TPC6001 TPC6001 transistor marking S2A s2a transistor | |
smd TRANSISTOR code marking w2t
Abstract: MARKING SMD PNP TRANSISTOR w2t w2t smd transistor TRANSISTOR SMD MARKING CODE s2a SMD TRANSISTOR w2w smd marking e2w smd code W2W transistor e2w lm1455 marking code w2T
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1-800-52-HI-REL 1-800-52-HI-REL. smd TRANSISTOR code marking w2t MARKING SMD PNP TRANSISTOR w2t w2t smd transistor TRANSISTOR SMD MARKING CODE s2a SMD TRANSISTOR w2w smd marking e2w smd code W2W transistor e2w lm1455 marking code w2T | |
2N1165
Abstract: 2n11 2N1163 2N2445 Germanium power
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2N512 2N512j' 2N5121~ TRANSIS2N1164A 2N1165 2N1165A 2N1166 2N1167A 2N2Ei12 2n11 2N1163 2N2445 Germanium power | |
TC227Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching |
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IRFR9220, IRFU9220 TA17502. TC227 | |
fd3055Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a |
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RFD3055, RFD3055SM, RFP3055 TA49082. fd3055 | |
TK2048
Abstract: 104PW
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OCR Scan |
TK2048 104PW | |
TRANSISTOR S2d
Abstract: TK-10 TRANSISTOR S1d
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OCR Scan |
TK1024A/October TK1024 TRANSISTOR S2d TK-10 TRANSISTOR S1d | |
Contextual Info: Fault Protection and Detection, 10 Ω RON, Dual SPDT Switch ADG5436F Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Interrupt flags indicate fault status |
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ADG5436F 16-Lead CP-16-17) ADG5436FBRUZ ADG5436FBRUZ-RL7 ADG5436FBCPZ-RL7 | |
FD3055
Abstract: Fp3055
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RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055 | |
TRANSISTOR S2A
Abstract: transistor marking S2A s2a transistor
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FJX3906 OT-323 TRANSISTOR S2A transistor marking S2A s2a transistor |