SA201 Search Results

NONLINEAR MODEL LDMOS

Contextual Info: SA2013 SA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR MODE VDD VC GND Package Style: QFN, 16-Pin, 0.9mm x 3mm x 3mm 16 15 14 13 Features Broadband 50MHz to 4000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical 

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

cn/A/U 237 BG

Contextual Info: AVX Periodic Tables Version 10.1 The Latest CV Tables from the Leader in Capacitor Technology Table of Contents COMMERCIAL PRODUCTS Product Line Card . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4 CERAMIC CAPACITORS

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

SA-20

Abstract: sa20
Contextual Info: Axial Leads/SpinGuard GENERAL DESCRIPTION AVX SA Series Conformally Coated Axial Leaded MLC Temperature Coefficients: C0G NP0 , X7R, X5R, Z5U 10, 50, 100, 200 Volts Case Material: Epoxy (Flame Retardant to UL Bulletin 492, Par. 280) Lead Material: Solderable

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

TSOP-20 FOOTPRINT

Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

10001000XXX

Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

SA158

Abstract: SA214 8adrr
Contextual Info: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡

astec sa201

Abstract: SA145-3490 astec sa145-3490 SA100-3430-3 ASTEC 145w SA131-3400-3 SA201-34 SA145-3480 astec lpt40 SA146
Contextual Info: The new Astec lo w p ow er switchers o ffe r outstanding perform ance, price a n d re lia b ility as w d l as the latest in b ig h teehnci!|jgy parforinfTiee. These switchers range fro m 25 to 250 watts o f po w e r and c o p e in a wide va rie ty o f configurations. A va ila b le its a

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

10001XXXXX

Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

IS29GL256

Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns

RFSA2013SQ

Abstract: RFSA2013SR 501ghz sa2013
Contextual Info: SA2013 SA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features 2 RFIN 3 VDD VC GND 14 13 12 GND Patent Pending Circuit Architecture Broadband 50MHz to 4000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical

RFSA2023PCK-410

Abstract: RFSA2013
Contextual Info: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical NC 2 RFIN 3 VDD VC GND 15 14 13 CONTROL BLOCK 4 Low Supply Current 1mA Typical

SA2013-410

Abstract: rfsa2023 RFSA2023PCK-410 MICROWAVE BJT 2GHZ sa2013 Emerson 142-0741-851
Contextual Info: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical 12 GND 11 NC VDD VC GND 10 RFOUT 4 9 7 NC 8 GND 6 GND 3.3V Power Supply

MX29GL256FLT2I-90Q

Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

PowerLogic PM710

Abstract: LC2K0901 SE5855 LC1K0910 PM820MG SE585 Merlin Gerin PM710 MP20B schneider pm710 telemecanique contactor catalogue
Contextual Info: SE5855 Select "Edition 4" 3/5/06 Edition 4 12:40 pm Page 1 Product catalogue 06 Residential Commercial Industrial SE5855 Select "Edition 4" 3/5/06 12:40 pm Page 2 Our mission is to provide you with convenience and quality through our S-elect range. S-elect consists of over 1000 of our

RFSA2013TR13

Abstract: RMC1/16S-101JTH
Contextual Info: SA2013 SA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical NC 4 12 GND 11 NC VDD VC GND 10 RFOUT 9 7 NC 8 GND 6 GND

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages